Top-emitting nitride-based light emitting device and method of manufacturing the same

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	Top-emitting nitride-based light emitting device and method of manufacturing the same
其他题名	Top-emitting nitride-based light emitting device and method of manufacturing the same
	SONG, JUNE-O; SEONG, TAE-YEON; KWAK, JOON-SEOP; HONG, WOONG-KI
	2010-02-23
专利权人	SAMSUNG ELECTRONICS CO., LTD.
公开日期	2010-02-23
授权国家	美国
专利类型	授权发明
摘要	Provided are a top-emitting N-based light emitting device and a method of manufacturing the same. The device includes a substrate, an n-type clad layer, an active layer, a p-type clad layer, and a multi ohmic contact layer, which are sequentially stacked. The multi ohmic contact layer includes one or more stacked structures, each including a modified metal layer and a transparent conductive thin film layer, which are repetitively stacked on the p-type clad layer. The modified metal layer is formed of an Ag-based material.
其他摘要	提供一种顶部发光的N基发光器件及其制造方法。该器件包括依次堆叠的衬底，n型覆层，有源层，p型覆层和多欧姆接触层。多欧姆接触层包括一个或多个堆叠结构，每个堆叠结构包括改性金属层和透明导电薄膜层，它们重复地堆叠在p型覆层上。改性金属层由Ag基材料形成。
授权日期	2010-02-23
申请日期	2008-07-25
专利号	US7666693
专利状态	授权
申请号	US12/180312
公开（公告）号	US7666693
IPC 分类号	H01L21/00 \| H01L21/28 \| H01L33/06 \| H01L33/32 \| H01L33/42
专利代理人	-
代理机构	CANTOR COLBURN,LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/38471
专题	半导体激光器专利数据库
作者单位	SAMSUNG ELECTRONICS CO., LTD.
推荐引用方式 GB/T 7714	SONG, JUNE-O,SEONG, TAE-YEON,KWAK, JOON-SEOP,et al. Top-emitting nitride-based light emitting device and method of manufacturing the same. US7666693[P]. 2010-02-23.

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