Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device

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	Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device
其他题名	Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device
	KAMIKAWA, TAKESHI; KAWAGUCHI, YOSHINOBU
	2011-11-29
专利权人	SHARP KABUSHIKI KAISHA
公开日期	2011-11-29
授权国家	美国
专利类型	授权发明
摘要	Provided are a nitride semiconductor light emitting device including a coat film formed at a light emitting portion and including an aluminum nitride crystal or an aluminum oxynitride crystal, and a method of manufacturing the nitride semiconductor light emitting device. Also provided is a nitride semiconductor transistor device including a nitride semiconductor layer and a gate insulating film which is in contact with the nitride semiconductor layer and includes an aluminium nitride crystal or an aluminum oxynitride crystal.
其他摘要	本发明提供一种氮化物半导体发光器件，其包括在发光部分处形成并包括氮化铝晶体或氮氧化铝晶体的涂层膜，以及制造该氮化物半导体发光器件的方法。还提供了一种氮化物半导体晶体管器件，包括氮化物半导体层和与氮化物半导体层接触并包括氮化铝晶体或氮氧化铝晶体的栅极绝缘膜。
授权日期	2011-11-29
申请日期	2008-06-23
专利号	US8067255
专利状态	授权
申请号	US12/213686
公开（公告）号	US8067255
IPC 分类号	H01L21/00 \| H01L21/336 \| H01L21/338 \| H01L29/778 \| H01L29/78 \| H01L29/812 \| H01S5/028 \| H01S5/343
专利代理人	-
代理机构	HARNESS,DICKEY & PIERCE,P.L.C.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/38465
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	KAMIKAWA, TAKESHI,KAWAGUCHI, YOSHINOBU. Nitride semiconductor light emitting device, method of manufacturing nitride semiconductor light emitting device, and nitride semiconductor transistor device. US8067255[P]. 2011-11-29.

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