Epitaxial regrowth in a distributed feedback laser

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	Epitaxial regrowth in a distributed feedback laser
其他题名	Epitaxial regrowth in a distributed feedback laser
	HA, YUK LUNG; YOUNG, DAVID BRUCE; VERMA, ASHISH; DIMITROV, ROMAN
	2011-10-11
专利权人	FINISAR CORPORATION
公开日期	2011-10-11
授权国家	美国
专利类型	授权发明
摘要	Optimizing the regrowth over epitaxial layers during manufacture of a distributed feedback laser. In one example embodiment, a method for depositing an InP regrowth layer on an epitaxial base portion of a distributed feedback laser includes growing a first portion of the regrowth layer at an initial substrate temperature of approximately 580 degrees Celsius to a thickness between approximately 300 Angstroms and approximately 900 Angstroms, increasing the substrate temperature from the initial substrate temperature to an increased substrate temperature of approximately 660 degrees Celsius, growing a second portion of the regrowth layer at the increased substrate temperature, doping a first part of an uppermost layer of the regrowth layer at a concentration of approximately 8.0010^17/cm3 at the increased substrate temperature, and doping a second part of the uppermost layer of the regrowth layer at a concentration between approximately 9010^18/cm3 and approximately 2.00*10^18/cm3 at the increased substrate temperature.
其他摘要	在制造分布式反馈激光器期间优化外延层的再生长。在一个示例实施例中，用于在分布式反馈激光器的外延基部上沉积InP再生长层的方法包括在大约580摄氏度的初始衬底温度下生长再生长层的第一部分至大约300埃之间的厚度。大约900埃，将衬底温度从初始衬底温度增加到大约660摄氏度的增加的衬底温度，在增加的衬底温度下生长第二部分再生长层，掺杂再生长层的最上层的第一部分在增加的衬底温度下，浓度约为8.00×10 ^ 17 / cm3，并且再生长层的最上层的第二部分的浓度在约90×1018 / cm3和约2.00 * 10 ^ 18之间。在增加的衬底温度下/ cm3。
授权日期	2011-10-11
申请日期	2007-05-15
专利号	US8034648
专利状态	授权
申请号	US11/749007
公开（公告）号	US8034648
IPC 分类号	H01L21/00 \| H01L21/31 \| H01L21/469
专利代理人	-
代理机构	MASCHOFF GILMORE & ISRAELSEN
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/38353
专题	半导体激光器专利数据库
作者单位	FINISAR CORPORATION
推荐引用方式 GB/T 7714	HA, YUK LUNG,YOUNG, DAVID BRUCE,VERMA, ASHISH,et al. Epitaxial regrowth in a distributed feedback laser. US8034648[P]. 2011-10-11.

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