LED having a low defect N-type layer that has grown on a silicon substrate

OPT OpenIR > 半导体激光器专利数据库

	LED having a low defect N-type layer that has grown on a silicon substrate
其他题名	LED having a low defect N-type layer that has grown on a silicon substrate
	CHEN, ZHEN
	2014-10-21
专利权人	KABUSHIKI KAISHA TOSHIBA
公开日期	2014-10-21
授权国家	美国
专利类型	授权发明
摘要	A vertical GaN-based blue LED has an n-type GaN layer that was grown directly on Low Resistance Layer (LRL) that in turn was grown over a silicon substrate. In one example, the LRL is a low sheet resistance GaN/AlGaN superlattice having periods that are less than 300 nm thick. Growing the n-type GaN layer on the superlattice reduces lattice defect density in the n-type layer. After the epitaxial layers of the LED are formed, a conductive carrier is wafer bonded to the structure. The silicon substrate is then removed. Electrodes are added and the structure is singulated to form finished LED devices. In some examples, some or all of the LRL remains in the completed LED device such that the LRL also serves a current spreading function. In other examples, the LRL is entirely removed so that no portion of the LRL is present in the completed LED device.
其他摘要	垂直GaN基蓝色LED具有n型GaN层，其直接生长在低电阻层（LRL）上，低电阻层又在硅衬底上生长。在一个示例中，LRL是具有小于300nm厚的周期的低薄层电阻GaN / AlGaN超晶格。在超晶格上生长n型GaN层降低了n型层中的晶格缺陷密度。在形成LED的外延层之后，将导电载体晶片接合到该结构。然后除去硅衬底。添加电极并将结构单个化以形成成品LED器件。在一些示例中，LRL中的一些或全部保留在完成的LED装置中，使得LRL也用于电流扩散功能。在其他示例中，完全移除LRL，使得在完成的LED装置中不存在LRL的任何部分。
授权日期	2014-10-21
申请日期	2011-08-02
专利号	US8865565
专利状态	失效
申请号	US13/196854
公开（公告）号	US8865565
IPC 分类号	H01L33/00 \| H01L21/30 \| H01L33/62 \| H01L33/12
专利代理人	-
代理机构	HOGAN LOVELLS US LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/37533
专题	半导体激光器专利数据库
作者单位	KABUSHIKI KAISHA TOSHIBA
推荐引用方式 GB/T 7714	CHEN, ZHEN. LED having a low defect N-type layer that has grown on a silicon substrate. US8865565[P]. 2014-10-21.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
US8865565.PDF（1519KB）	专利		开放获取	CC BY-NC-SA	请求全文