Tailorable titanium-tungsten alloy material thermally matched to semiconductor substrates and devices

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	Tailorable titanium-tungsten alloy material thermally matched to semiconductor substrates and devices
其他题名	Tailorable titanium-tungsten alloy material thermally matched to semiconductor substrates and devices
	HUFF, MICHAEL A.; SUNAL, PAUL
	2014-10-07
专利权人	CORPORATION FOR NATIONAL RESEARCH INITIATIVES
公开日期	2014-10-07
授权国家	美国
专利类型	授权发明
摘要	The present invention relates generally to a metallic alloy composed of Titanium and Tungsten that together form an alloy having a Coefficient of Thermal Expansion (CTE), wherein the content of the respective constituents can be adjusted so that the alloy material can be nearly perfectly matched to that of a commonly used semiconductor and ceramic materials. Moreover, alloys of Titanium-Tungsten have excellent electrical and thermal conductivities making them ideal material choices for many electrical, photonic, thermoelectric, MMIC, NEMS, nanotechnology, power electronics, MEMS, and packaging applications. The present invention describes a method for designing the TiW alloy so as to nearly perfectly match the coefficient of thermal expansion of a large number of different types of commonly used semiconductor and ceramic materials. The present invention also describes a number of useful configurations wherein the TiW material is made as well as how it can be shaped, formed and polished into heat sink, heat spreaders, and electrodes for many applications. The present invention also discloses the direct bonding of a TiW substrate to a semiconductor substrate.
其他摘要	本发明一般涉及由钛和钨组成的金属合金，它们一起形成具有热膨胀系数（CTE）的合金，其中各组分的含量可以调节，使得合金材料几乎可以完全匹配。常用的半导体和陶瓷材料。此外，钛 - 钨合金具有优异的导电性和导热性，使其成为许多电子，光子，热电，MMIC，NEMS，纳米技术，电力电子，MEMS和封装应用的理想材料选择。本发明描述了一种设计TiW合金的方法，以便几乎完全匹配大量不同类型的常用半导体和陶瓷材料的热膨胀系数。本发明还描述了许多有用的配置，其中制造TiW材料以及如何将其成形，成形和抛光成散热器，散热器和电极以用于许多应用。本发明还公开了TiW衬底与半导体衬底的直接键合。
授权日期	2014-10-07
申请日期	2009-06-30
专利号	US8852378
专利状态	授权
申请号	US12/458073
公开（公告）号	US8852378
IPC 分类号	C22C1/00 \| C22C1/04 \| H01L23/373 \| H01L23/473 \| H01S5/024 \| H01S5/40
专利代理人	-
代理机构	NIXON & VANDERHYE, PC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/37425
专题	半导体激光器专利数据库
作者单位	CORPORATION FOR NATIONAL RESEARCH INITIATIVES
推荐引用方式 GB/T 7714	HUFF, MICHAEL A.,SUNAL, PAUL. Tailorable titanium-tungsten alloy material thermally matched to semiconductor substrates and devices. US8852378[P]. 2014-10-07.

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