Electro-absorption optical modulator integrated with a laser to produce high speed, uncooled, long distance, low power, 1550 nm optical communication device with optimized parameters

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	Electro-absorption optical modulator integrated with a laser to produce high speed, uncooled, long distance, low power, 1550 nm optical communication device with optimized parameters
其他题名	Electro-absorption optical modulator integrated with a laser to produce high speed, uncooled, long distance, low power, 1550 nm optical communication device with optimized parameters
	MAKINO, SHIGEKI
	2010-10-05
专利权人	LUMENTUM JAPAN, INC.
公开日期	2010-10-05
授权国家	美国
专利类型	授权发明
摘要	In a conventional EA/DFB laser, since the temperature dependence of the operation wavelength of the EA portion is substantially different from that of the DFB portion, the temperature range over which a stable operation is possible is small. In the case of using the EA/DFB laser as a light emission device, an uncooled operation is not possible. An EA/DFB laser which does not require a temperature control mechanism is proposed. A quantum well structure in which a well layer made of any one of InGaAlAs, InGaAsP, and InGaAs, and a barrier layer made of either one of InGaAlAs or InAlAs is used for an optical absorption layer of an EA modulator. By properly determining detuning at a temperature of 25° C. and a composition wavelength of the barrier layer in the quantum well structure used for the optical absorption layer, it can be realized to suppress the insertion loss, maintain the extinction ratio, and reduce chirping simultaneously over a wide temperature range from −5° C. to 80° C.
其他摘要	在传统的EA / DFB激光器中，由于EA部分的工作波长的温度依赖性与DFB部分的温度依赖性基本上不同，因此可以进行稳定操作的温度范围很小。在使用EA / DFB激光器作为发光装置的情况下，不能进行非制冷操作。提出了一种不需要温度控制机构的EA / DFB激光器。其中由InGaAlAs，InGaAsP和InGaAs中的任何一种制成的阱层和由InGaAlAs或InAlAs中的任一种制成的势垒层的量子阱结构用于EA调制器的光吸收层。通过适当地确定在用于光学吸收层的量子阱结构中在25℃的温度和阻挡层的组成波长下的失谐，可以实现抑制插入损耗，保持消光比，并减少啁啾。同时在-5°C至80°C的宽温度范围内
授权日期	2010-10-05
申请日期	2006-07-07
专利号	US7809038
专利状态	授权
申请号	US11/481918
公开（公告）号	US7809038
IPC 分类号	H01S3/04 \| H01S5/00
专利代理人	-
代理机构	MATTINGLY & MALUR,P.C.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/37238
专题	半导体激光器专利数据库
作者单位	LUMENTUM JAPAN, INC.
推荐引用方式 GB/T 7714	MAKINO, SHIGEKI. Electro-absorption optical modulator integrated with a laser to produce high speed, uncooled, long distance, low power, 1550 nm optical communication device with optimized parameters. US7809038[P]. 2010-10-05.

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