Mid-IR optically pumped semiconductor laser

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	Mid-IR optically pumped semiconductor laser
其他题名	Mid-IR optically pumped semiconductor laser
	ONGSTAD, ANDREW; KASPI, RON; DENTE, GREG; TILTON, MICHAEL; CHAVEZ, JOSEPH R.
	2008-12-23
专利权人	AIR FORCE, SECRETARY OF THE, THE GOVERNMENT OF THE UNITED STATES AS REPRESENTED BY THE
公开日期	2008-12-23
授权国家	美国
专利类型	授权发明
摘要	A waveguide mode isolation layer added between the active region and the heat sink bonding material of an optically pumped semiconductor laser isolates the optical mode from the bonding material.
其他摘要	在有源区和光泵浦半导体激光器的散热器接合材料之间添加的波导模式隔离层将光学模式与接合材料隔离。
授权日期	2008-12-23
申请日期	2005-05-23
专利号	US7469001
专利状态	失效
申请号	US11/135196
公开（公告）号	US7469001
IPC 分类号	H01S3/04
专利代理人	-
代理机构	CALLAHAN, KENNETH E.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/37149
专题	半导体激光器专利数据库
作者单位	AIR FORCE, SECRETARY OF THE, THE GOVERNMENT OF THE UNITED STATES AS REPRESENTED BY THE
推荐引用方式 GB/T 7714	ONGSTAD, ANDREW,KASPI, RON,DENTE, GREG,et al. Mid-IR optically pumped semiconductor laser. US7469001[P]. 2008-12-23.