Semiconductor laser device and method of manufacturing the same

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor laser device and method of manufacturing the same; Semiconductor laser device and method of manufacturing the same
其他题名	Semiconductor laser device and method of manufacturing the same ; Semiconductor laser device and method of manufacturing the same
	KAN, HIROFUMI; MIYAJIMA, HIROFUMI; WATANABE, NOBUO
	2009-02-03 ; 2009-02-03
专利权人	HAMAMATSU PHOTONICS K.K. ; HAMAMATSU PHOTONICS K.K.
公开日期	2009-02-03 ; 2009-02-03
授权国家	美国 ; 美国
专利类型	授权发明 ; 授权发明
摘要	A semiconductor laser device 1 comprises: a heat sink 20, in turn comprising a main cooler unit 21, formed by joining metal members, a fluid channel 30, formed inside the main cooler unit 21, a cooling region 23 on an outer wall surface 22, and a resin layer 40, being continuously coated onto the outer wall surface 22 and an inner wall surface 33 with the exception of the cooling region 23; and a semiconductor laser element 80, positioned at the cooling region 23 with thermal contact with the outer wall surface 22 being maintained. By continuously coating the outer wall surface 22 and the inner wall surface 33 with the resin layer 40 with the exception of the cooling region 23, prevention of corrosion near portions at which the outer wall surface and the inner wall surface contact each other is realized.; A semiconductor laser device 1 comprises: a heat sink 20, in turn comprising a main cooler unit 21, formed by joining metal members, a fluid channel 30, formed inside the main cooler unit 21, a cooling region 23 on an outer wall surface 22, and a resin layer 40, being continuously coated onto the outer wall surface 22 and an inner wall surface 33 with the exception of the cooling region 23; and a semiconductor laser element 80, positioned at the cooling region 23 with thermal contact with the outer wall surface 22 being maintained. By continuously coating the outer wall surface 22 and the inner wall surface 33 with the resin layer 40 with the exception of the cooling region 23, prevention of corrosion near portions at which the outer wall surface and the inner wall surface contact each other is realized.
其他摘要	半导体激光装置1包括：散热器20，其又包括通过连接金属构件形成的主冷却器单元21，形成在主冷却器单元21内部的流体通道30，外壁表面22上的冷却区域23。除了冷却区域23之外，树脂层40连续地涂覆在外壁表面22和内壁表面33上;半导体激光元件80位于冷却区域23，与外壁表面22保持热接触。通过除了冷却区域23之外的树脂层40连续涂覆外壁表面22和内壁表面33，实现了防止外壁表面和内壁表面彼此接触的部分附近的腐蚀。; 半导体激光装置1包括：散热器20，其又包括通过连接金属构件形成的主冷却器单元21，形成在主冷却器单元21内部的流体通道30，外壁表面22上的冷却区域23。除了冷却区域23之外，树脂层40连续地涂覆在外壁表面22和内壁表面33上;半导体激光元件80位于冷却区域23，与外壁表面22保持热接触。通过除了冷却区域23之外的树脂层40连续涂覆外壁表面22和内壁表面33，实现了防止外壁表面和内壁表面彼此接触的部分附近的腐蚀。
授权日期	2009-02-03 ; 2009-02-03
申请日期	2004-12-16 ; 2004-12-16
专利号	US7486710 ; US7486710
专利状态	失效 ; 失效
申请号	US10/577958 ; US10/577958
公开（公告）号	US7486710 ; US7486710
IPC 分类号	H01S3/04 \| H01L23/473 \| H01S5/022 \| H01S5/024 \| H01S5/40 ; H01S3/04 \| H01L23/473 \| H01S5/022 \| H01S5/024 \| H01S5/40
专利代理人	- ; -
代理机构	DRINKER BIDDLE & REATH LLP ; DRINKER BIDDLE & REATH LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/37117
专题	半导体激光器专利数据库
作者单位	HAMAMATSU PHOTONICS K.K.
推荐引用方式 GB/T 7714	KAN, HIROFUMI,MIYAJIMA, HIROFUMI,WATANABE, NOBUO. Semiconductor laser device and method of manufacturing the same, Semiconductor laser device and method of manufacturing the same. US7486710, US7486710[P]. 2009-02-03, 2009-02-03.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
US7486710.PDF（196KB）	专利		开放获取	CC BY-NC-SA	请求全文