Semiconductor modification process for conductive and modified electrical regions and related structures

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	Semiconductor modification process for conductive and modified electrical regions and related structures
其他题名	Semiconductor modification process for conductive and modified electrical regions and related structures
	BONAR, JAMES RONALD; VALENTINE, GARETH; GORTON, STEPHEN WARREN; GONG, ZHENG; SMALL, JAMES
	2019-02-19
专利权人	FACEBOOK TECHNOLOGIES, LLC
公开日期	2019-02-19
授权国家	美国
专利类型	授权发明
摘要	There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaN and modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads.
其他摘要	这里描述了一种用于为半导体提供改进的器件性能和制造技术的方法。更具体地，本发明涉及使用p-GaN改性和退火工艺在GaN半导体上形成诸如像素的特征的工艺。该方法还涉及等离子体和热退火工艺，其产生p-GaN改性层，其中退火同时能够形成导电p-GaN和改性p-GaN区域，其以类似n的方式表现并阻挡垂直电流流。该工艺还扩展到谐振腔发光二极管（RCLED），具有各种尺寸的像素和用于电气轨道和焊盘的电绝缘平面层。
授权日期	2019-02-19
申请日期	2015-02-13
专利号	US10211371
专利状态	授权
申请号	US15/118684
公开（公告）号	US10211371
IPC 分类号	H01S3/00 \| H01S5/187 \| H01S5/183 \| H01S5/042 \| H01L33/58 \| H01L33/14 \| H01S5/343 \| H01L33/00 \| H01S5/20 \| H01S5/02 \| H01S5/00 \| H01L33/10
专利代理人	-
代理机构	FENWICK & WEST LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/35655
专题	半导体激光器专利数据库
作者单位	FACEBOOK TECHNOLOGIES, LLC
推荐引用方式 GB/T 7714	BONAR, JAMES RONALD,VALENTINE, GARETH,GORTON, STEPHEN WARREN,et al. Semiconductor modification process for conductive and modified electrical regions and related structures. US10211371[P]. 2019-02-19.