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Semiconductor modification process for conductive and modified electrical regions and related structures
其他题名Semiconductor modification process for conductive and modified electrical regions and related structures
BONAR, JAMES RONALD; VALENTINE, GARETH; GORTON, STEPHEN WARREN; GONG, ZHENG; SMALL, JAMES
2019-02-19
专利权人FACEBOOK TECHNOLOGIES, LLC
公开日期2019-02-19
授权国家美国
专利类型授权发明
摘要There is herein described a process for providing improved device performance and fabrication techniques for semiconductors. More particularly, the present invention relates to a process for forming features, such as pixels, on GaN semiconductors using a p-GaN modification and annealing process. The process also relates to a plasma and thermal anneal process which results in a p-GaN modified layer where the annealing simultaneously enables the formation of conductive p-GaN and modified p-GaN regions that behave in an n-like manner and block vertical current flow. The process also extends to Resonant-Cavity Light Emitting Diodes (RCLEDs), pixels with a variety of sizes and electrically insulating planar layer for electrical tracks and bond pads.
其他摘要这里描述了一种用于为半导体提供改进的器件性能和制造技术的方法。更具体地,本发明涉及使用p-GaN改性和退火工艺在GaN半导体上形成诸如像素的特征的工艺。该方法还涉及等离子体和热退火工艺,其产生p-GaN改性层,其中退火同时能够形成导电p-GaN和改性p-GaN区域,其以类似n的方式表现并阻挡垂直电流流。该工艺还扩展到谐振腔发光二极管(RCLED),具有各种尺寸的像素和用于电气轨道和焊盘的电绝缘平面层。
授权日期2019-02-19
申请日期2015-02-13
专利号US10211371
专利状态授权
申请号US15/118684
公开(公告)号US10211371
IPC 分类号H01S3/00 | H01S5/187 | H01S5/183 | H01S5/042 | H01L33/58 | H01L33/14 | H01S5/343 | H01L33/00 | H01S5/20 | H01S5/02 | H01S5/00 | H01L33/10
专利代理人-
代理机构FENWICK & WEST LLP
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/35655
专题半导体激光器专利数据库
作者单位FACEBOOK TECHNOLOGIES, LLC
推荐引用方式
GB/T 7714
BONAR, JAMES RONALD,VALENTINE, GARETH,GORTON, STEPHEN WARREN,et al. Semiconductor modification process for conductive and modified electrical regions and related structures. US10211371[P]. 2019-02-19.
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