High-power quantum cascade lasers with active-photonic-crystal structure for single, in-phase mode operation

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	High-power quantum cascade lasers with active-photonic-crystal structure for single, in-phase mode operation
其他题名	High-power quantum cascade lasers with active-photonic-crystal structure for single, in-phase mode operation
	BOTEZ, DAN; KIRCH, JEREMY DANIEL
	2013-04-23
专利权人	WISCONSIN ALUMNI RESEARCH FOUNDATION
公开日期	2013-04-23
授权国家	美国
专利类型	授权发明
摘要	Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure, and a plurality of laterally-spaced trench regions extending transversely through the cladding and optical confinement structures, and partially into the QCL structure. The trench regions define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device. The element regions are characterized by a non-uniform structure across their widths. As a result of this structural non-uniformity, array modes composed of coupled first-order lateral modes of the element regions are preferentially suppressed relative to array modes composed of coupled fundamental lateral modes of the element regions.
其他摘要	提供了能够发射中长波红外（即4-12μm）辐射的半导体激光器阵列器件。该器件包括量子级联激光器（QCL）结构，其包括一个或多个有源芯;光学限制结构;包层结构和多个横向间隔开的沟槽区域，这些沟槽区域横向延伸穿过包层和光学限制结构，并且部分地延伸到QCL结构中。沟槽区域限定了由激光器阵列器件中的元件区域分开的多个横向间隔的元件区域。元件区域的特征在于其宽度上的不均匀结构。作为这种结构不均匀性的结果，相对于由元件区域的耦合基本横向模式组成的阵列模式，优先抑制由元件区域的耦合的一阶横向模式组成的阵列模式。
授权日期	2013-04-23
申请日期	2011-03-11
专利号	US8428093
专利状态	授权
申请号	US13/046269
公开（公告）号	US8428093
IPC 分类号	H01S5/00
专利代理人	-
代理机构	BELL & MANNING, LLC
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/35616
专题	半导体激光器专利数据库
作者单位	WISCONSIN ALUMNI RESEARCH FOUNDATION
推荐引用方式 GB/T 7714	BOTEZ, DAN,KIRCH, JEREMY DANIEL. High-power quantum cascade lasers with active-photonic-crystal structure for single, in-phase mode operation. US8428093[P]. 2013-04-23.

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