Complex coupling MQW semiconductor laser

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	Complex coupling MQW semiconductor laser
其他题名	Complex coupling MQW semiconductor laser
	KOBAYASHI, HIROHIKO; ISHIKAWA, TSUTOMU; SHOJI, HAJIME
	2005-02-01
专利权人	FUJITSU LIMITED
公开日期	2005-02-01
授权国家	美国
专利类型	授权发明
摘要	A method of manufacturing a distributed feedback semiconductor laser, has the steps of: growing on a semiconductor substrate a lamination of alternately stacked lower barrier layer and lower well layer having a band gap narrower than the lower barrier layer, to form a lower quantum well structure; growing an intermediate layer on an uppermost lower well layer, the intermediate layer having a band gap broader than the lower well and a thickness thicker than the lower barrier layer; growing on the intermediate layer a lamination of alternately stacked upper well layer and upper barrier layer having a band gap broader than the upper well layer and a thickness thinner than the intermediate layer, to form an upper quantum well structure; forming a mask on the upper quantum well structure, the mask having periodical pattern; by using the mask as an etching mask, etching the upper quantum well structure in a periodical shape by using the intermediate layer as an etching margin layer; and removing the mask. Complex coupling DFB lasers with a small variation in characteristics can be provided.
其他摘要	一种制造分布式反馈半导体激光器的方法，具有以下步骤：在半导体衬底上生长交替堆叠的下部阻挡层和下部阱层的叠层，所述下部阱层具有比下部阻挡层窄的带隙，以形成下部量子阱结构;在最上面的下部阱层上生长中间层，中间层具有比下部阱宽的带隙，并且厚度比下部阻挡层厚;在中间层上生长交替堆叠的上阱层和上势垒层的叠层，其具有比上阱层宽的带隙和比中间层薄的厚度，以形成上量子阱结构;在上量子阱结构上形成掩模，掩模具有周期性图案;通过使用掩模作为蚀刻掩模，通过使用中间层作为蚀刻边缘层，以周期性形状蚀刻上量子阱结构;并删除面具。可以提供具有小的特性变化的复合耦合DFB激光器。
授权日期	2005-02-01
申请日期	2001-03-14
专利号	US6850550
专利状态	授权
申请号	US09/805182
公开（公告）号	US6850550
IPC 分类号	H01S5/00 \| H01S5/12 \| H01S5/20 \| H01L29/06 \| H01S3/08
专利代理人	-
代理机构	WESTERMAN,HATTORI,DANIELS & ADRIAN,LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/35396
专题	半导体激光器专利数据库
作者单位	FUJITSU LIMITED
推荐引用方式 GB/T 7714	KOBAYASHI, HIROHIKO,ISHIKAWA, TSUTOMU,SHOJI, HAJIME. Complex coupling MQW semiconductor laser. US6850550[P]. 2005-02-01.

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