Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials

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	Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
其他题名	Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
	WONG, WILLIAM S.; KNEISSL, MICHAEL A.
	2003-05-13
专利权人	EPISTAR CORPORATION
公开日期	2003-05-13
授权国家	美国
专利类型	授权发明
摘要	A method for placing nitride laser diode arrays on a thermally and electrically conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A secondary layer is subsequently deposited to act as a transfer support structure and bonding interface. The membrane is released from the intermediate substrate and a thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed. Similarly, the secondary layer may be used as the new host substrate given an appropriate thickness is deposited prior to removal of the intermediate substrate.
其他摘要	描述了一种用于将氮化物激光二极管阵列放置在导热和导电基板上的方法。该方法使用准分子激光器，在将中间基板附着到与蓝宝石基板相对的一侧之后，将氮化物激光二极管从蓝宝石生长基板上分离。随后沉积第二层以用作转移支撑结构和键合界面。将膜从中间基板释放，随后将导热基板粘合到去除蓝宝石基板的一侧。类似地，在去除中间基板之前沉积适当的厚度，第二层可以用作新的主基板。
授权日期	2003-05-13
申请日期	2000-08-23
专利号	US6562648
专利状态	授权
申请号	US09/648187
公开（公告）号	US6562648
IPC 分类号	H01L21/20 \| H01L21/02 \| H01S5/323 \| H01L33/00 \| H01S5/02 \| H01S5/00 \| H01S5/343 \| H01L21/00
专利代理人	-
代理机构	CHEN, KENT M.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/35364
专题	半导体激光器专利数据库
作者单位	EPISTAR CORPORATION
推荐引用方式 GB/T 7714	WONG, WILLIAM S.,KNEISSL, MICHAEL A.. Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials. US6562648[P]. 2003-05-13.

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