Optical device with an asymmetric dual quantum well structure

OPT OpenIR > 半导体激光器专利数据库

	Optical device with an asymmetric dual quantum well structure
其他题名	Optical device with an asymmetric dual quantum well structure
	FUJII, KAZUHITO, C/O CANON KABUSHIKI KAISHA; ONO, TAKEO, C/O CANON KABUSHIKI KAISHA
	1997-07-23
专利权人	CANON KABUSHIKI KAISHA
公开日期	1997-07-23
授权国家	欧洲专利局
专利类型	授权发明
摘要	An optical device includes an asymmetric dual quantum well (ADQW) structure which is comprised of a plur ality(at least two) of different semiconductor quantum well layers coupled to each other. In the ADQW structure, the width of a deeper quantum well layer (42) having a narrower band gap is made narrower than that of a less deeper quantum well layer (41) having a wider band gap such that the shift of an exciton wavelength is scarcely caused due to the quantum confined Stark effect by the application of an electric field in a predetermined range. As a result, only a refractive index of the ADQW structure is changed, but an absorption factor is scarcely changed for a given range of wavelength by the application of the electric field. Further, there is provided a member for applying an electric field to the asymmetric dual quantum well structure.
其他摘要	光学器件包括不对称双量子阱（ADQW）结构，其由彼此耦合的多个（至少两个）不同半导体量子阱层组成。在ADQW结构中，具有较窄带隙的较深量子阱层（42）的宽度比具有较宽带隙的较深量子阱层（41）的宽度窄，使得激子波长的偏移为由于在预定范围内施加电场而引起的量子限制斯塔克效应几乎不会引起。结果，仅改变ADQW结构的折射率，但是通过施加电场对于给定的波长范围几乎不改变吸收因子。此外，提供了一种用于向不对称双量子阱结构施加电场的构件。
申请日期	1991-10-25
专利号	EP0483687B1
专利状态	失效
申请号	EP1991118250
公开（公告）号	EP0483687B1
IPC 分类号	G02F1/025 \| G02F1/015 \| G02F1/017 \| H01L31/14 \| H01S5/00 \| H01S5/062 \| H01S5/34 \| H01S5/50
专利代理人	-
代理机构	PELLMANN, HANS-BERND, DIPL.-ING.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/34963
专题	半导体激光器专利数据库
作者单位	CANON KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	FUJII, KAZUHITO, C/O CANON KABUSHIKI KAISHA,ONO, TAKEO, C/O CANON KABUSHIKI KAISHA. Optical device with an asymmetric dual quantum well structure. EP0483687B1[P]. 1997-07-23.