High performance ZnO-based laser diodes

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	High performance ZnO-based laser diodes
其他题名	High performance ZnO-based laser diodes
	LIU, JIANLIN; CHU, SHENG
	2012-11-06
专利权人	REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE
公开日期	2012-11-06
授权国家	美国
专利类型	授权发明
摘要	Systems and methods for electrically pumped, surface-emitting and edge emitting ZnO ultraviolet diode lasers are disclosed. The ZnO diode laser may be fabricated using growth processes (e.g., MBE) to form Sb-doped ZnO as a p-type layer and doped ZnO as an n-type layer. ZnO-based quantum well structures may be further formed in between the n- and p-type ZnO layers. The ZnO layers and quantum wells may be grown in columnar structures which act as resonant cavities for generated light, significantly improving light amplification and providing high power output. For example, ultraviolet lasing at around 380 nm was demonstrated at about room temperature at a threshold current density of about 10 A/cm2. The output power was further measured to be about 13 μW at about 130 mA driving current.
其他摘要	公开了用于电泵浦，表面发射和边缘发射ZnO紫外二极管激光器的系统和方法。可以使用生长工艺（例如，MBE）来制造ZnO二极管激光器，以形成作为p型层的Sb掺杂的ZnO和作为n型层的掺杂的ZnO。可以在n型和p型ZnO层之间进一步形成ZnO基量子阱结构。 ZnO层和量子阱可以以柱状结构生长，柱状结构用作产生光的谐振腔，显着改善光放大并提供高功率输出。例如，在约室温下以约10A / cm 2的阈值电流密度证明在380nm附近的紫外激光。在约130mA的驱动电流下，输出功率进一步测量为约13μW。
申请日期	2009-09-30
专利号	US8306083
专利状态	授权
申请号	US12/570695
公开（公告）号	US8306083
IPC 分类号	H01S5/00
专利代理人	-
代理机构	KNOBBE,MARTENS,OLSON & BEAR,LLP
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/34603
专题	半导体激光器专利数据库
作者单位	REGENTS OF THE UNIVERSITY OF CALIFORNIA, THE
推荐引用方式 GB/T 7714	LIU, JIANLIN,CHU, SHENG. High performance ZnO-based laser diodes. US8306083[P]. 2012-11-06.

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