Light emitting diode resistant to change in operating temperature

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	Light emitting diode resistant to change in operating temperature
其他题名	Light emitting diode resistant to change in operating temperature
	MATSUMOTO, KENJI
	1992-10-20
专利权人	EASTMAN KODAK COMPANY, A CORPORATION OF NJ
公开日期	1992-10-20
授权国家	美国
专利类型	授权发明
摘要	A light emitting diode which does not readily cause an intensity of emitted light to fluctuate even when the operating temperature changes includes a substrate having thereon a light emitting layer and a reflector. The diode includes a light emitting layer which is of a composition which is adapted to generate and radiate light the intensity of which and the light emission spectrum changes of which depend on temperature. Over the light emitting layer is a reflector which is of a composition having a wavelength dependent characteristic which compensates for any such fluctuations in the light intensity and light emission spectrum of the light emitting layer. Direct light from the light emitting layer and light reflected by the reflector can be removed to the exterior of the diode to provide a light emission of uniform intensity even when the diode is subjected to changes in temperature.
其他摘要	即使在工作温度变化时也不容易使发射光的强度波动的发光二极管包括其上具有发光层和反射器的基板。二极管包括发光层，该发光层具有适于产生和辐射其强度和发光光谱变化的光的成分，该发光光谱的变化取决于温度。在发光层上方是反射器，其具有波长相关特性的组合物，其补偿发光层的光强度和发光光谱中的任何这种波动。来自发光层的直射光和由反射器反射的光可以被移除到二极管的外部，以便即使在二极管经受温度变化时也提供均匀强度的光发射。
申请日期	1991-08-09
专利号	US5157468
专利状态	失效
申请号	US07/742822
公开（公告）号	US5157468
IPC 分类号	H01L33/00 \| H01S5/028 \| H01S5/183 \| H01S5/00 \| H01S5/125 \| B41J2/44 \| B41J2/45 \| B41J2/455 \| G09F9/33 \| H01L33/08 \| H01L33/10 \| H01L33/14 \| H01L33/20 \| H01L33/30 \| H01L33/40
专利代理人	-
代理机构	OWENS, RAYMOND L.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/33383
专题	半导体激光器专利数据库
作者单位	EASTMAN KODAK COMPANY, A CORPORATION OF NJ
推荐引用方式 GB/T 7714	MATSUMOTO, KENJI. Light emitting diode resistant to change in operating temperature. US5157468[P]. 1992-10-20.

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