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Three-dimensional thermal model of high-power semiconductor lasers
Wu, Di-Hai1,2,3; Zah, Chung-En2; Liu, Xingsheng2
作者部门瞬态光学研究室
2019-05-10
发表期刊APPLIED OPTICS
ISSN1559-128X;2155-3165
卷号58期号:14页码:3892-3901
产权排序1
摘要

In this paper, 3-D, steady-state, analytical thermal models of high-power single-emitter semiconductor lasers (SEs) and laser diode arrays (LDAs) are derived, considering the heat conduction in multi-layered laser structures. Heat flow in the laser chips for an epi-down bonded SE and LDA is described using this model, and it is observed that the laser chips contribute to 8% and 6% of total heat dissipation for the SE and LDA, respectively. The submount size requirement for this model is discussed by revealing the heat flow in the submount. Through finite element simulations, the solution accuracy for the lasers with non-ideal submounts is confirmed. Finally, the performance of our proposed analytical models is verified by finite element simulations and experimental measurements based on the wavelength shift method. (C) 2019 Optical Society of America

DOI10.1364/AO.58.003892
收录类别SCI ; EI
语种英语
WOS记录号WOS:000467540700029
出版者OPTICAL SOC AMER
EI入藏号20192106950947
引用统计
被引频次:11[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.opt.ac.cn/handle/181661/31510
专题瞬态光学研究室
通讯作者Liu, Xingsheng
作者单位1.Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, 17 Xinxi Rd, Xian 710119, Shaanxi, Peoples R China
2.Focuslight Technol Inc, 56 Zhangba 6th Rd, Xian 710077, Shaanxi, Peoples R China
3.Univ Chinese Acad Sci, Mat Sci & Optoelect Engn, 19 Yuquan Rd, Beijing 100049, Peoples R China
推荐引用方式
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Wu, Di-Hai,Zah, Chung-En,Liu, Xingsheng. Three-dimensional thermal model of high-power semiconductor lasers[J]. APPLIED OPTICS,2019,58(14):3892-3901.
APA Wu, Di-Hai,Zah, Chung-En,&Liu, Xingsheng.(2019).Three-dimensional thermal model of high-power semiconductor lasers.APPLIED OPTICS,58(14),3892-3901.
MLA Wu, Di-Hai,et al."Three-dimensional thermal model of high-power semiconductor lasers".APPLIED OPTICS 58.14(2019):3892-3901.
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