Measurement Method and Device for Transient Thermal Impedance of High Power IGBT Module | |
其他题名 | 大功率 IGBT 模块瞬态热阻的测试方法与装置 |
Lu, Guoquan1,2; Li, Jie1; Mei, Yunhui1; Li, Xin1; Wang, Lei3; Mei, Yunhui (yunhui@tju.edu.cn) | |
作者部门 | 瞬态光学技术国家重点实验室 |
2017-07-15 | |
发表期刊 | Tianjin Daxue Xuebao (Ziran Kexue yu Gongcheng Jishu Ban)/Journal of Tianjin University Science and Technology |
ISSN | 04932137 |
卷号 | 50期号:7页码:669-675 |
产权排序 | 1 |
摘要 | To characterize the thermal performance of high power insulated gate bipolar transistor(IGBT)module, a transient thermal impedance measurement device based on the electrical method for IGBT module was designed and built. By changing heating pulse duration of the measurement device equal to the thermal time constants of different material layers, the effective thermal conduction paths in IGBT module can be controlled and the transient thermal impedance of each component within the IGBT module can be obtained. In addition, the impacts of the transient noise in the instant transformation of high-low level and the boundary heat condition on measurement accuracy were discussed. Results show that the device has good accuracy and repeatability, which will prove useful in analyzing the thermal dispersion performance of different devices and packaging materials under transient conditions accurately and nondestructively and guiding the IGBT module structure design and packaging material selection. © 2017, Editorial Board of Journal of Tianjin University(Science and Technology). All right reserved. |
DOI | 10.11784/tdxbz201606072 |
收录类别 | EI |
语种 | 中文 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/29447 |
专题 | 瞬态光学研究室 |
通讯作者 | Mei, Yunhui (yunhui@tju.edu.cn) |
作者单位 | 1.School of Materials Science and Engineering, Tianjin University, Tianjin; 300350, China 2.State Key Laboratory of Transient Optics and Photonics, Chinese Academy of Sciences, Xi'an; 710119, China 3.School of Chemical Engineering and Technology, Tianjin University, Tianjin; 300350, China |
推荐引用方式 GB/T 7714 | Lu, Guoquan,Li, Jie,Mei, Yunhui,et al. Measurement Method and Device for Transient Thermal Impedance of High Power IGBT Module[J]. Tianjin Daxue Xuebao (Ziran Kexue yu Gongcheng Jishu Ban)/Journal of Tianjin University Science and Technology,2017,50(7):669-675. |
APA | Lu, Guoquan,Li, Jie,Mei, Yunhui,Li, Xin,Wang, Lei,&Mei, Yunhui .(2017).Measurement Method and Device for Transient Thermal Impedance of High Power IGBT Module.Tianjin Daxue Xuebao (Ziran Kexue yu Gongcheng Jishu Ban)/Journal of Tianjin University Science and Technology,50(7),669-675. |
MLA | Lu, Guoquan,et al."Measurement Method and Device for Transient Thermal Impedance of High Power IGBT Module".Tianjin Daxue Xuebao (Ziran Kexue yu Gongcheng Jishu Ban)/Journal of Tianjin University Science and Technology 50.7(2017):669-675. |
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文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
Measurement Method a(1131KB) | 期刊论文 | 出版稿 | 限制开放 | CC BY-NC-SA | 请求全文 |
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