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Ultrafast all-optical imaging technique using low-temperature grown GaAs/AlxGa1-xAs multiple-quantum-well semiconductor
Gao, Guilong1,2,3; Tian, Jinshou1,4; Wang, Tao1; He, Kai1; Zhang, Chunmin2; Zhang, Jun5; Chen, Shaorong5; Jia, Hui5; Yuan, Fenfang5; Liang, Lingliang5; Yan, Xin1; Li, Shaohui1; Wang, Chao1; Yin, Fei1
Department精密物理量测量实验室
2017-11-05
Source PublicationPHYSICS LETTERS A
ISSN0375-9601
Volume381Issue:41Pages:3594-3598
Contribution Rank1
Abstract

We report and experimentally demonstrate an ultrafast all-optical imaging technique capable of single shot ultrafast recording with a picosecond-scale temporal resolution and a micron-order two-dimensional spatial resolution. A GaAs/AlxGa1-xAs multiple-quantum-well (MQW) semiconductor with a picosecond response time, grown using molecular beam epitaxy (MBE) at a low temperature (LT), is used for the first time in ultrafast imaging technology. The semiconductor transforms the signal beam information to the probe beam, the birefringent delay crystal time-serializes the input probe beam, and the beam displacer maps different polarization probe beams onto different detector locations, resulting in two frames with an approximately 9 ps temporal separation and approximately 25 Ipimm spatial resolution in the visible range. (C) 2017 Elsevier B.V. All rights reserved.

SubtypeArticle
KeywordUltrafast Optics Optical Imaging System Ultrafast Semiconductor Chip Framing Camera Ultrafast Measurements
WOS HeadingsScience & Technology ; Physical Sciences
DOI10.1016/j.physleta.2017.08.064
Indexed BySCI
WOS KeywordMAPPING PHOTOGRAPHY STAMP ; IGNITION
Language英语
WOS Research AreaPhysics
Funding OrganizationMajor Program of the National Natural Science Foundation of China(41530422) ; National Natural Science Foundation of China(11274377 ; CAS "Light of West China"(XAB2015B21) ; 11675258)
WOS SubjectPhysics, Multidisciplinary
WOS IDWOS:000413383400013
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.opt.ac.cn/handle/181661/29373
Collection条纹相机工程中心
Affiliation1.Chinese Acad Sci, XIOPM, Key Lab Ultra Fast Photoelect Diagnost Technol, Xian 710119, Shaanxi, Peoples R China
2.Xi An Jiao Tong Univ, Sch Sci, Inst Space Opt, Xian 710049, Shaanxi, Peoples R China
3.Univ Chinese Acad Sci CAS, Beijing 100049, Peoples R China
4.Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China
5.Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China
Recommended Citation
GB/T 7714
Gao, Guilong,Tian, Jinshou,Wang, Tao,et al. Ultrafast all-optical imaging technique using low-temperature grown GaAs/AlxGa1-xAs multiple-quantum-well semiconductor[J]. PHYSICS LETTERS A,2017,381(41):3594-3598.
APA Gao, Guilong.,Tian, Jinshou.,Wang, Tao.,He, Kai.,Zhang, Chunmin.,...&Yin, Fei.(2017).Ultrafast all-optical imaging technique using low-temperature grown GaAs/AlxGa1-xAs multiple-quantum-well semiconductor.PHYSICS LETTERS A,381(41),3594-3598.
MLA Gao, Guilong,et al."Ultrafast all-optical imaging technique using low-temperature grown GaAs/AlxGa1-xAs multiple-quantum-well semiconductor".PHYSICS LETTERS A 381.41(2017):3594-3598.
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