Xi'an Institute of Optics and Precision Mechanics,CAS
| Measurement of excited layer thickness in highly photo-excited GaAs | |
Liang, Lingliang1,2,3; Tian, Jinshou1 ; Wang, Tao1; Wu, Shengli3; Li, Fuli1; Gao, Guilong1,2,3; Liang, Lingliang (lianglingliang@opt.cn)
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| 2016 | |
| 会议名称 | International Symposium on Optical Measurement Technology and Instrumentation |
| 会议录名称 | Optical Measurement Technology and Instrumentation |
| 卷号 | 10155 |
| 会议日期 | 2016-05-09 |
| 会议地点 | Beijing, China |
| 出版者 | SPIE |
| 产权排序 | 1 |
| 摘要 | Highly photo-excited layer thickness in GaAs is measured using a pump probe arrangement. A normally incident pump illumination spatially modulated by a mask will induce a corresponding refractive index change distribution in the depth direction due to edge scattering and attenuation absorption effect, which can deflect the probe beam passing through this excited region. Maximum deflection of the probe beam will be limited by the thickness of excited layer, and thus can also be employed to measure the thickness of the photo-excited layer of the material. Theoretical calculation confirms the experimental results. This method can find its application in measurements of photo-excited layer thickness of many kinds of materials and be significant to study the characteristics of materials in laser machining, grating and waveguide fabricating. © 2016 SPIE. |
| 关键词 | Gallium Arsenide Optical Data Processing Optical Variables Measurement Probes Semiconducting Gallium |
| 学科领域 | Single Element Semiconducting Materials |
| 作者部门 | 精密物理量测量实验室 |
| DOI | 10.1117/12.2246652 |
| 收录类别 | EI ; ISTP |
| ISBN号 | 9781510607682 |
| 语种 | 英语 |
| ISSN号 | 0277786X |
| 引用统计 | |
| 文献类型 | 会议论文 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/28593 |
| 专题 | 条纹相机工程中心 |
| 通讯作者 | Liang, Lingliang (lianglingliang@opt.cn) |
| 作者单位 | 1.Xi'an Institute of Optics and Precision Mechanics of Chinese Academy of Science, State Key Laboratory of Transient Optics and Photonics, No.17 Xinxi Road, Xi'an; 710119, China 2.Graduate University of Chinese, Academy of Sciences, No.19 Yuquan Road, Beijing; 100049, China 3.Xi'an Jiaotong University, No.28 Xianning Road, Xi'an; 710049, China |
| 推荐引用方式 GB/T 7714 | Liang, Lingliang,Tian, Jinshou,Wang, Tao,et al. Measurement of excited layer thickness in highly photo-excited GaAs[C]:SPIE,2016. |
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| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| Measurement of excit（473KB） | 会议论文 | 开放获取 | CC BY-NC-SA | 请求全文 | ||
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