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Novel displacement in transmission through a two-dimensional semiconductor barrier
Chen, X; Li, CF; Ban, Y
2006-05-22
发表期刊PHYSICS LETTERS A
卷号354期号:1-2页码:161-165
摘要The lateral displacement of electron beams transmitting through a two-dimensional semiconductor barrier is quite different from the prediction from Snell's law for electron waves. It is shown that the displacement can be greatly enhanced by transmission resonance when the incidence angle is less than but close to the critical angle for total reflection. The displacement depends not only on the barrier's thickness but also on the incidence angle and the incidence energy. The influence of electron's effective mass is also discussed. Theoretical results of the stationary-phase approach are confirmed by numerical simulations for a Gaussian-shaped incident beam. These phenomena may lead to novel applications in quantum electronic devices. (c) 2006 Elsevier B.V. All rights reserved.
文章类型Article
关键词Lateral Displacement Ballistic Electron Beam Resonance Enhancement
WOS标题词Science & Technology ; Physical Sciences
DOI10.1016/j.physleta.2006.01.023
收录类别SCI
关键词[WOS]ELECTRON-WAVE-OPTICS ; TUNNELING TIME ; HETEROSTRUCTURE ; GUIDES ; INTERFERENCE
语种英语
WOS研究方向Physics
WOS类目Physics, Multidisciplinary
WOS记录号WOS:000237686500025
引用统计
被引频次:32[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.opt.ac.cn/handle/181661/25174
专题瞬态光学研究室
作者单位1.Shanghai Univ, Dept Phys, Shanghai 200444, Peoples R China
2.Acad Sinica, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt Technol, Xian 710068, Peoples R China
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Chen, X,Li, CF,Ban, Y. Novel displacement in transmission through a two-dimensional semiconductor barrier[J]. PHYSICS LETTERS A,2006,354(1-2):161-165.
APA Chen, X,Li, CF,&Ban, Y.(2006).Novel displacement in transmission through a two-dimensional semiconductor barrier.PHYSICS LETTERS A,354(1-2),161-165.
MLA Chen, X,et al."Novel displacement in transmission through a two-dimensional semiconductor barrier".PHYSICS LETTERS A 354.1-2(2006):161-165.
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