| Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE | |
| He, YN; Zhang, JW; Yang, XD; Xu, QA; Liu, XH; Zhu, CC; Hou, X | |
| 2005-02-01 | |
| 发表期刊 | MICROELECTRONICS JOURNAL
 |
| 卷号 | 36期号:2页码:125-128 |
| 摘要 | The high purity ZnO ceramic target and the (MgO)(0.1)(ZnO)(0.9) target were fabricated. The wurtzite-phase ZnO thin film and ternary MgxZn1-xO thin film were grown on sapphire (0001) substrates by laser molecular beam epitaxy (L-MBE) from the sintered ceramic targets separately. The films' transmittance spectra at room temperature for the ZnO film and the MgxZn1-xO film were measured and compared while their room temperature photoluminescence spectra were done. The band-gap modulation is realized from 3.31 eV for the ZnO film to 3.64 eV for the MgxZn1-xO alloy film. The Mg content x in the MgxZn1-xO alloy film was determined to be 0.18. (C) 2004 Elsevier Ltd. All rights reserved. |
| 文章类型 | Article |
| 关键词 | Mgzno Alloy Thin Film Zno Thin Film L-mbe Ceramic Target |
| WOS标题词 | Science & Technology ; Technology |
| DOI | 10.1016/j.mejo.2004.11.005 |
| 收录类别 | SCI ; EI |
| 关键词[WOS] | ROOM-TEMPERATURE ; ZNO FILMS ; MGXZN1-XO ; SUBSTRATE ; GROWTH ; ALLOY |
| 语种 | 英语 |
| WOS研究方向 | Engineering ; Science & Technology - Other Topics |
| WOS类目 | Engineering, Electrical & Electronic ; Nanoscience & Nanotechnology |
| WOS记录号 | WOS:000226874000005 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/25138 |
| 专题 | 瞬态光学研究室 |
| 作者单位 | 1.Xian Jiaotong Univ, Dept Elect Sci & Technol, Sch Elect & Informat, Xian 710049, Peoples R China 2.Acad Sinica, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt, Xian 710068, Peoples R China |
| 推荐引用方式 GB/T 7714 | He, YN,Zhang, JW,Yang, XD,et al. Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE[J]. MICROELECTRONICS JOURNAL,2005,36(2):125-128. |
| APA | He, YN.,Zhang, JW.,Yang, XD.,Xu, QA.,Liu, XH.,...&Hou, X.(2005).Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE.MICROELECTRONICS JOURNAL,36(2),125-128. |
| MLA | He, YN,et al."Preparation and characteristics of the wide gap semiconductor Mg0.18Zn0.82O thin film by L-MBE".MICROELECTRONICS JOURNAL 36.2(2005):125-128. |
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