| Numerical analysis of temporal response of a large exponential-doping transmission-mode GaAs photocathode | |
Cai, Zhipeng1; Yang, Wenzheng2 ; Tang, Weidong1; Hou, Xun1
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| 作者部门 | 瞬态光学与光子技术国家重点实验室 |
| 2013-04-01 | |
| 发表期刊 | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
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| ISSN | 1369-8001 |
| 卷号 | 16期号:2页码:238-244 |
| 摘要 | The theory of temporal response properties for a large exponential-doping transmission mode GaAs photocathode is discussed in detail. By the introduction of a new concept referred to as "average decay time", the deficiency usually caused by the boundary condition in the previous calculations is effectively eliminated. The analytical results show that the response time of the new GaAs photocathode can be significantly reduced to several picoseconds in the absence of bias. In addition, the thickness of the GaAs absorption layer we obtained is much larger than that of traditional GaAs photocathodes with the same response time, which means that the novel photocathode with ultrafast time response will have higher yield, especially in near-infrared region. (c) 2012 Elsevier Ltd. All rights reserved. |
| 文章类型 | Review |
| 关键词 | Temporal Response The Average Delay Time Large Exponential-doping Gaas Photocathode |
| WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
| DOI | 10.1016/j.mssp.2012.09.011 |
| 收录类别 | SCI ; EI |
| 关键词[WOS] | THEORETICAL CALCULATION ; ELECTRON SOURCE ; SURFACE ; RANGE |
| 语种 | 英语 |
| WOS研究方向 | Engineering ; Materials Science ; Physics |
| WOS类目 | Engineering, Electrical & Electronic ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter |
| WOS记录号 | WOS:000316581400002 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/21839 |
| 专题 | 瞬态光学研究室 |
| 作者单位 | 1.Chinese Acad Sci, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710119, Shaanxi, Peoples R China 2.Chinese Acad Sci, Xian Inst Opt & Precis Mech, Key Lab Ultrafast Photoelect Diagnost Technol, Xian 710119, Shaanxi, Peoples R China |
| 推荐引用方式 GB/T 7714 | Cai, Zhipeng,Yang, Wenzheng,Tang, Weidong,et al. Numerical analysis of temporal response of a large exponential-doping transmission-mode GaAs photocathode[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,2013,16(2):238-244. |
| APA | Cai, Zhipeng,Yang, Wenzheng,Tang, Weidong,&Hou, Xun.(2013).Numerical analysis of temporal response of a large exponential-doping transmission-mode GaAs photocathode.MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING,16(2),238-244. |
| MLA | Cai, Zhipeng,et al."Numerical analysis of temporal response of a large exponential-doping transmission-mode GaAs photocathode".MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 16.2(2013):238-244. |
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| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| Numerical analysis o（622KB） | 期刊论文 | 出版稿 | 限制开放 | CC BY | 请求全文 | |
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