| The time response of exponential doping NEA InGaAs photocathode applied to near infrared streak cameras | |
| Tang, Weidong; Yang, Wenzheng; Cai, Zhipeng; Sun, Chuandong | |
| 2012 | |
| 会议名称 | 2nd International Conference on Advances in Materials and Manufacturing Processes, ICAMMP 2011 |
| 会议录名称 | Advanced Materials |
| 页码 | 1403-1406 |
| 会议日期 | December 16, 2011 - December 18, 2011 |
| 会议地点 | Guilin, China |
| 出版地 | Germany |
| 会议主办者 | University of Wollongong; Northeastern University; University of Science and Technology Beijing; Hebei Polytechnic University |
| 出版者 | Trans Tech Publications, P.O. Box 1254, Clausthal-Zellerfeld, D-38670, Germany |
| 产权排序 | 1 |
| 摘要 | An exponential doping NEA InGaAs photocathode is theoretically proposed to apply in the near infrared streak camera. The photocathode time response is calculated and analyzed by using a photoelectron non-steady method. The numerical results show that the excited electrons in the InGaAs active layer is accelerated due to the built-in electric field induced by the exponential doping structure, which shortens the transport time of minority carriers in the photocathode and thus, the time response is greatly improved. In addition, the exponential doping InGaAs photocathode possesses time response of less than 10 picoseconds and near-infrared quantum efficiency of 10%. |
| 作者部门 | 瞬态光学技术研究室 |
| 收录类别 | CPCI（ISTP） ; EI |
| ISBN号 | 9783037853252 |
| 语种 | 英语 |
| ISSN号 | 10226680 |
| 文献类型 | 会议论文 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/20563 |
| 专题 | 瞬态光学研究室 |
| 推荐引用方式 GB/T 7714 | Tang, Weidong,Yang, Wenzheng,Cai, Zhipeng,et al. The time response of exponential doping NEA InGaAs photocathode applied to near infrared streak cameras[C]. Germany:Trans Tech Publications, P.O. Box 1254, Clausthal-Zellerfeld, D-38670, Germany,2012:1403-1406. |
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| The time response of（358KB） | 限制开放 | CC BY-NC-SA | 请求全文 | |||
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