Theoretical energy distributions of electrons from a large exponential-doping GaAs photocathode

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	Theoretical energy distributions of electrons from a large exponential-doping GaAs photocathode
	Cai, Zhipeng; Yang, Wenzheng; Tang, Weidong; Hou, Xun
	2012
会议名称	2nd International Conference on Advances in Materials and Manufacturing Processes, ICAMMP 2011
会议录名称	Advanced Materials
页码	1302-1305
会议日期	December 16, 2011 - December 18, 2011
会议地点	Guilin, China
出版地	Germany
会议主办者	University of Wollongong; Northeastern University; University of Science and Technology Beijing; Hebei Polytechnic University
出版者	Trans Tech Publications, P.O. Box 1254, Clausthal-Zellerfeld, D-38670, Germany
产权排序	1
摘要	Theoretical calculation indicates that the large exponential-doping GaAs photocathodes have a much narrower electron energy distribution than traditional GaAs NEA cathodes, and the excellent performance attributes to the special structure characters of the band-bending region and lower negative electron affinity of the new-type GaAs photocathodes. The effects of surface doping concentration and work function on the energy distribution are discussed in details, and the FWHM of the energy distribution is less than 100meV. The simulation results indicate that the large exponential-doping mode further improves the features of the electron energy spreads for GaAs photocathodes, which may meet the further demand of next generation of electron guns.
作者部门	瞬态光学技术研究室
收录类别	CPCI（ISTP） ; EI
ISBN号	9783037853252
语种	英语
ISSN号	10226680
文献类型	会议论文
条目标识符	http://ir.opt.ac.cn/handle/181661/20556
专题	瞬态光学研究室
推荐引用方式 GB/T 7714	Cai, Zhipeng,Yang, Wenzheng,Tang, Weidong,et al. Theoretical energy distributions of electrons from a large exponential-doping GaAs photocathode[C]. Germany:Trans Tech Publications, P.O. Box 1254, Clausthal-Zellerfeld, D-38670, Germany,2012:1302-1305.

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