| Mid-infrared Emission Properties of Ho3+-doped Ge-Ga-S-CsI Glasses | |
Zhu Jun1; Dai Shi-Xun1,2; Peng Bo2 ; Xu Tie-Feng1; Wang Xun-Si1; Zhang Xiang-Hua1,3
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| 作者部门 | 光谱成像技术实验室 |
| 2010-05-01 | |
| 发表期刊 | JOURNAL OF INORGANIC MATERIALS
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| ISSN | 0020-1685 |
| 卷号 | 25期号:5页码:546-550 |
| 摘要 | A serial of chalcogenide glasses based on Ge-Ga-S-Csl system doped with the different Ho3+ ions were synthesized by melt-quenching technique. The properties of glasses including refractive indexes, absorption spectra, mid-infrared emission spectra and lifetimes of I-5(6) level of Ho3+ ions were measured. The Judd-Ofelt intensity parameters Omega(i)(i=2,4,6), oscillator strength f(cal), spontaneous transition probabilities A(rad) for Ho3+ ion were calculated by Judd-Ofelt theory. Multiphonon relaxation rates of the Ho3+ : I-5(5)-> I-5(6) and I-5(6)-> I-5(7) in Ge-Ga-S-Csl glasses were evaluated. Effect of Ho3+ ion concentration on the fluorescence spectra was investigated. The results indicate that the fluorescence under 900 nm excitation with peak wavelength at 2. 81 mu m and 3. 86 mu m are due to the Ho3+ : I-5(6)-> I-5(6) and I-5(6)-> I-5(7) transition, respectively. The intensity of the mid-infrared fluorescence are enhanced with the Ho3+ ion concentration increasing from 0. 5wt% to 1. 0wt%. Multiphonon relaxation rates are 29s(-1) and 34s(-1) for the Ho3+ : I-5(5)-> I-5(6) and I-5(6)-> I-5(7) transition, respectively. |
| 文章类型 | Article |
| 关键词 | Mid-infrared Luminescence Chalcogenide Glass Ho3++ -ion |
| WOS标题词 | Science & Technology ; Technology |
| DOI | 10.3724/SP.J.1077.2010.00546 |
| 收录类别 | SCI ; EI |
| 关键词[WOS] | RARE-EARTH IONS ; CHALCOHALIDE GLASSES ; OPTICAL-PROPERTIES ; ENERGY-TRANSFER ; SULFIDE GLASS ; UP-CONVERSION ; SPECTROSCOPY ; CHALCOGENIDE ; INTENSITIES ; HOLMIUM |
| 语种 | 中文 |
| WOS研究方向 | Materials Science |
| WOS类目 | Materials Science, Ceramics |
| WOS记录号 | WOS:000277948500019 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/10051 |
| 专题 | 光谱成像技术研究室 |
| 作者单位 | 1.Ningbo Univ, Coll Informat Sci & Engn, Ningbo 315211, Zhejiang, Peoples R China 2.Chinese Acad Sci, State Key Lab Transient Opt & Photon, Xian Inst Opt & Precis Mech, Xian 710119, Peoples R China 3.Univ Rennes 1, Lab Verres & Ceram, Rennes 35042, France |
| 推荐引用方式 GB/T 7714 | Zhu Jun,Dai Shi-Xun,Peng Bo,et al. Mid-infrared Emission Properties of Ho3+-doped Ge-Ga-S-CsI Glasses[J]. JOURNAL OF INORGANIC MATERIALS,2010,25(5):546-550. |
| APA | Zhu Jun,Dai Shi-Xun,Peng Bo,Xu Tie-Feng,Wang Xun-Si,&Zhang Xiang-Hua.(2010).Mid-infrared Emission Properties of Ho3+-doped Ge-Ga-S-CsI Glasses.JOURNAL OF INORGANIC MATERIALS,25(5),546-550. |
| MLA | Zhu Jun,et al."Mid-infrared Emission Properties of Ho3+-doped Ge-Ga-S-CsI Glasses".JOURNAL OF INORGANIC MATERIALS 25.5(2010):546-550. |
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| Mid-infrared Emissio（1179KB） | 期刊论文 | 出版稿 | 限制开放 | CC BY-NC-SA | 请求全文 | |
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