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Studies on deep levels in GaAs epilayers grown on Si by metal-organic chemical vapour deposition .4. 0.96 eV photoluminescence emission 期刊论文
JOURNAL OF MATERIALS SCIENCE LETTERS, 1996, 卷号: 15, 期号: 3, 页码: 189-191
Authors:  Liang, JC;  Zhao, JL;  Gao, Y;  Dou, K;  Huang, SH;  Yu, JQ;  Gao, HK
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STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS 期刊论文
JOURNAL OF MATERIALS SCIENCE LETTERS, 1995, 卷号: 14, 期号: 14, 页码: 1004-1006
Authors:  ZHAO, JL;  GAO, Y;  LIU, XY;  DOU, K;  HUANG, SH;  YU, JQ;  LIANG, JC;  GAO, HK
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STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .2. 1.13 EV PHOTOLUMINESCENCE EMISSION 期刊论文
JOURNAL OF MATERIALS SCIENCE LETTERS, 1994, 卷号: 13, 期号: 23, 页码: 1694-1696
Authors:  ZHAO, JL;  GAO, Y;  LIU, XY;  SU, XA;  HUANG, SH;  YU, JQ;  LIANG, JC;  GAO, HK
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