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High-quality GaN grown by gas-source MBE 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 页码: 386-389
Authors:  Wang, JX;  Sun, DZ;  Wang, XL;  Li, JM;  Zeng, YP;  Hou, X;  Lin, LY
Adobe PDF(100Kb)  |  Favorite  |  View/Download:117/0  |  Submit date:2015/11/09
Characterization  Molecular Beam Epitaxy  Gallium Compounds  Nitrides  Piezoelectric Materials  Semiconducting Gallium Compounds  
Study of GSMBE growth and characteristics of high-quality strained In0.63Ga0.37As/InP quantum wells 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1997, 卷号: 180, 期号: 1, 页码: 22-26
Authors:  Wang, XL;  Sun, DZ;  Kong, MY;  Hou, X;  Zeng, YP
Adobe PDF(330Kb)  |  Favorite  |  View/Download:16/0  |  Submit date:2018/06/13
Quantum Wells  Gsmbe  Ingaas/inp  Photoluminescence