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SiC power MOSFET with monolithically integrated Schottky barrier diode for improved switching performances 会议论文
PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Nuremberg, Germany, 2017-05-16
作者:  Dai, Xiaoping;  Jiang, Huaping;  Zheng, Changwei;  Ke, Maolong
Adobe PDF(310Kb)  |  收藏  |  浏览/下载：134/0  |  提交时间：2018/03/07