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Theoretical and experimental study on responsivity of ultra-fast X-ray semiconductor chip based on the rad-optic effect
Yan, Xin1,2; Wang, Tao2; Wang, Gang2; Yao, Dong1,2; Liu, Yiheng2; Gao, Guilong2; Xin, Liwei1,2; Yin, Fei2; Tian, Jinshou2; Chang, Xinlong1; He, Kai2
作者部门条纹相机工程中心
2023-04
发表期刊Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
ISSN01689002
卷号1049
产权排序1
摘要

Semiconductor sensors based on the rad-optic effect enable ultra-fast detection of X-rays and play an important role in fusion diagnostics. Obtaining the responsivity of the semiconductor ultrafast response material is an important part of characterization. In this work, the refractive index change mechanism of the semiconductor under X-ray irradiation was analyzed, and the quantitative relationship between the diffraction efficiency and the X-ray photon energy was established through the LT-AlGaAs diffraction imaging experiments. The impulse responses of LT-AlGaAs under 1 keV–10 keV X-ray radiation were calculated, revealing the variation of responsivity with radiated photon energy. Imaging experiments of LT-AlGaAs were performed by bombarding an Al target to generate 1.5 keV X-rays. The diffraction images were obtained in agreement with the simulations. The responsivity of the semiconductor chip increases with the square of the incident X-ray power density. This study provides meaningful analyses for the development of ultra-fast X-ray imaging systems based on the rad-optic effect. © 2023 Elsevier B.V.

关键词X-ray detector Rad-optic effect Ultrafast response semiconductor material Responsivity Ultrafast measurements
DOI10.1016/j.nima.2023.168070
收录类别SCI ; EI
语种英语
WOS记录号WOS:000997336700001
出版者Elsevier B.V.
EI入藏号20230613549807
引用统计
文献类型期刊论文
条目标识符http://ir.opt.ac.cn/handle/181661/96333
专题条纹相机工程中心
通讯作者Chang, Xinlong
作者单位1.Rocket Force University of Engineering, Xi'an; 710025, China;
2.Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Xi'an Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS), Shaanxi, Xi'an; 710119, China
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Yan, Xin,Wang, Tao,Wang, Gang,et al. Theoretical and experimental study on responsivity of ultra-fast X-ray semiconductor chip based on the rad-optic effect[J]. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment,2023,1049.
APA Yan, Xin.,Wang, Tao.,Wang, Gang.,Yao, Dong.,Liu, Yiheng.,...&He, Kai.(2023).Theoretical and experimental study on responsivity of ultra-fast X-ray semiconductor chip based on the rad-optic effect.Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment,1049.
MLA Yan, Xin,et al."Theoretical and experimental study on responsivity of ultra-fast X-ray semiconductor chip based on the rad-optic effect".Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 1049(2023).
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