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The dual-injection Ge-on-Si photodetectors with high saturation power by optimizing light field distribution
Cui, Jishi1; Li, Tiantian2; Yang, Fenghe3; Cui, Wenjing1; Chen, Hongmin1
Department光子网络技术研究室
2021-02-01
Source PublicationOptics Communications
ISSN00304018
Volume480
Contribution Rank2
Abstract

In this work, we put forward the length design principle of the dual-injection integrated Ge-on-Si photodetectors based on the characteristics of the light field distribution. When the length of the absorption layer makes the maximum intensity of the incident light from both ends are alternately distributed, the light field distribution is more uniform. Based on this principle, the shorter photodetector could get better saturation performance. Two dual-injection photodetectors with the length of 6μm and 10μm have been investigated, the experimental results show that the saturation current of 6μm length device is 18.33% higher, and the bandwidth is 138.60% higher at 10 mW incident power comparing with the 10μm length device. The 6μm length photodetector realized a responsivity of 1.07 A/W, a bandwidth of 37.3 GHz at 50 μW luminous power @1550 nm. © 2020 Elsevier B.V.

KeywordGe-on-Si photodetector Silicon photonics Evanescent wave coupling Saturated optical power
DOI10.1016/j.optcom.2020.126467
Indexed BySCI ; EI
Language英语
WOS IDWOS:000588332200013
PublisherElsevier B.V., Netherlands
EI Accession Number20203909239219
Citation statistics
Document Type期刊论文
Identifierhttp://ir.opt.ac.cn/handle/181661/93713
Collection光子网络技术研究室
Corresponding AuthorCui, Jishi
Affiliation1.School of Information Engineering, Sanming University, Sanming; 365004, China;
2.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics (XIOPM), Chinese Academy of Sciences (CAS), Xi'an; 710119, China;
3.Peking University Yangtze Delta Institute of Optoelectronics, Nantong; 226006, China
Recommended Citation
GB/T 7714
Cui, Jishi,Li, Tiantian,Yang, Fenghe,et al. The dual-injection Ge-on-Si photodetectors with high saturation power by optimizing light field distribution[J]. Optics Communications,2021,480.
APA Cui, Jishi,Li, Tiantian,Yang, Fenghe,Cui, Wenjing,&Chen, Hongmin.(2021).The dual-injection Ge-on-Si photodetectors with high saturation power by optimizing light field distribution.Optics Communications,480.
MLA Cui, Jishi,et al."The dual-injection Ge-on-Si photodetectors with high saturation power by optimizing light field distribution".Optics Communications 480(2021).
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