Vertical cavity surface emitting laser with undoped top mirror

OPT OpenIR > 半导体激光器专利数据库

	Vertical cavity surface emitting laser with undoped top mirror
其他题名	Vertical cavity surface emitting laser with undoped top mirror
	JOHNSON, RALPH H.; PENNER, R. SCOTT; BIARD, JAMES ROBERT
	2011-04-21
专利权人	FINISAR CORPORATION
公开日期	2011-04-21
授权国家	美国
专利类型	发明申请
摘要	A VCSEL with undoped top mirror. The VCSEL is formed from an epitaxial structure deposited on a substrate. A doped bottom mirror is formed on the substrate. An active layer that includes quantum wells is formed on the bottom mirror. A periodically doped conduction layer is formed on the active layer. The periodically doped conduction layer is heavily doped at locations where the optical energy is at a minimum when the VCSEL is in operation. A current aperture is used between the conduction layer and the active region. An undoped top mirror is formed on the heavily doped conduction layer.
其他摘要	带有未掺杂顶部镜子的VCSEL。 VCSEL由沉积在衬底上的外延结构形成。在衬底上形成掺杂的底部镜子。在底部镜子上形成包括量子阱的有源层。在有源层上形成周期性掺杂的导电层。当VCSEL工作时，周期性掺杂的导电层在光能最小的位置处重掺杂。在导电层和有源区之间使用电流孔。在重掺杂导电层上形成未掺杂的顶部镜子。
申请日期	2010-12-27
专利号	US20110090930A1
专利状态	授权
申请号	US12/979248
公开（公告）号	US20110090930A1
IPC 分类号	H01S5/183 \| H01L33/46
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/93168
专题	半导体激光器专利数据库
作者单位	FINISAR CORPORATION
推荐引用方式 GB/T 7714	JOHNSON, RALPH H.,PENNER, R. SCOTT,BIARD, JAMES ROBERT. Vertical cavity surface emitting laser with undoped top mirror. US20110090930A1[P]. 2011-04-21.