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Semiconductor device and method of fabricating the same
其他题名Semiconductor device and method of fabricating the same
JUN, CHI HOON; KO, SANG CHOON; MOON, SEOK-HWAN; CHANG, WOOJIN; BAE, SUNG-BUM; PARK, YOUNG RAK; NA, JE HO; MUN, JAE KYOUNG; NAM, EUN SOO
2016-08-04
专利权人ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
公开日期2016-08-04
授权国家美国
专利类型发明申请
摘要Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another.
其他摘要提供一种半导体器件及其制造方法。该半导体器件包括:设置在基板上的有源区;入口通道形成为埋在基板一侧的单个腔;出口通道形成为埋在基板另一侧的单个腔;包括多个微通道的微通道阵列,其中所述多个微通道形成为埋在基板中的多个腔,并且微通道阵列的一端连接到入口通道的一侧,另一端连接到微通道阵列的一端。微通道阵列的一部分连接到出口通道的一侧;以及将微通道彼此分开的微型散热器阵列。
主权项A method of fabricating a semiconductor device, the method comprising: providing a substrate; forming an active region of a bottom of the substrate; forming a first conductive layer on a top of the substrate; patterning the substrate by etching using the first conductive layer as an etching mask to form a plurality of open cavities in the substrate; and forming a second conductive layer on the first conductive layer to seal the plurality of open cavities.
申请日期2016-04-08
专利号US20160225631A1
专利状态授权
申请号US15/093814
公开(公告)号US20160225631A1
IPC 分类号H01L21/3065 | H01L21/308 | H01L21/3205 | H01L23/367
专利代理人-
代理机构-
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/54684
专题半导体激光器专利数据库
作者单位ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
推荐引用方式
GB/T 7714
JUN, CHI HOON,KO, SANG CHOON,MOON, SEOK-HWAN,et al. Semiconductor device and method of fabricating the same. US20160225631A1[P]. 2016-08-04.
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