Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor device and method of fabricating the same | |
其他题名 | Semiconductor device and method of fabricating the same |
JUN, CHI HOON; KO, SANG CHOON; MOON, SEOK-HWAN; CHANG, WOOJIN; BAE, SUNG-BUM; PARK, YOUNG RAK; NA, JE HO; MUN, JAE KYOUNG; NAM, EUN SOO | |
2016-08-04 | |
专利权人 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
公开日期 | 2016-08-04 |
授权国家 | 美国 |
专利类型 | 发明申请 |
摘要 | Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another. |
其他摘要 | 提供一种半导体器件及其制造方法。该半导体器件包括:设置在基板上的有源区;入口通道形成为埋在基板一侧的单个腔;出口通道形成为埋在基板另一侧的单个腔;包括多个微通道的微通道阵列,其中所述多个微通道形成为埋在基板中的多个腔,并且微通道阵列的一端连接到入口通道的一侧,另一端连接到微通道阵列的一端。微通道阵列的一部分连接到出口通道的一侧;以及将微通道彼此分开的微型散热器阵列。 |
主权项 | A method of fabricating a semiconductor device, the method comprising: providing a substrate; forming an active region of a bottom of the substrate; forming a first conductive layer on a top of the substrate; patterning the substrate by etching using the first conductive layer as an etching mask to form a plurality of open cavities in the substrate; and forming a second conductive layer on the first conductive layer to seal the plurality of open cavities. |
申请日期 | 2016-04-08 |
专利号 | US20160225631A1 |
专利状态 | 授权 |
申请号 | US15/093814 |
公开(公告)号 | US20160225631A1 |
IPC 分类号 | H01L21/3065 | H01L21/308 | H01L21/3205 | H01L23/367 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/54684 |
专题 | 半导体激光器专利数据库 |
作者单位 | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
推荐引用方式 GB/T 7714 | JUN, CHI HOON,KO, SANG CHOON,MOON, SEOK-HWAN,et al. Semiconductor device and method of fabricating the same. US20160225631A1[P]. 2016-08-04. |
条目包含的文件 | 条目无相关文件。 |
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