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Secondary electron emission characteristics of Al2O3 coatings prepared by atomic layer deposition
Guo, Junjiang1,2,3; Wang, Dan4; Xu, Yantao1,3; Zhu, Xiangping1,3; Wen, Kaile3,5; Miao, Guanghui6; Cao, Weiwei1,3; Si, JinHai2; Lu, Min1; Guo, Haitao1
Department先进光电与生物材料研发中心
2019-09-01
Source PublicationAIP Advances
ISSN21583226
Volume9Issue:9
Contribution Rank1
Abstract

Secondary electron emission (SEE) plays a crucial role in the gain performance of devices, such as electron multipliers and microchannel plates (MCPs). Gain performance could be improved by increasing the secondary electron yield (SEY) of device surface. Al2O3 coating is an ideal material for SEE, benefiting from its high SEY. The Al2O3 coating deposited on inner device walls by atomic layer deposition (ALD) can improve the gain performance of devices. In this study, the SEE characteristics of Al2O3 coatings were investigated experimentally. A series of Al2O3 coatings with thicknesses of 1-30 nm were prepared on Si substrate through the ALD method. Then, the SEY of the coatings were quantified as a function of primary electron energy in the range of 100∼1500 eV. Furthermore, an equation describing the true SEY as a function of thickness was established by applying theory of Dionne's SEE model. This work presents potential approach for controlling the SEE level of Al2O3 coatings through thickness adjustment and is crucial for comprehending the SEE of composite materials. © 2019 Author(s).

DOI10.1063/1.5113671
Indexed ByEI
Language英语
PublisherAmerican Institute of Physics Inc.
EI Accession Number20193807440396
Citation statistics
Document Type期刊论文
Identifierhttp://ir.opt.ac.cn/handle/181661/31864
Collection先进光电与生物材料研发中心
Corresponding AuthorGuo, Haitao
Affiliation1.State Key Laboratory of Transient Optics and Photonics, Xian Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xian; 710119, China;
2.Key Laboratory for Physical Electronics, Devices of the Ministry of Education, Shaanxi Key Lab of Information Photonic Technique, School of Electronics and Information Engineering, Xian Jiaotong University, Xian; 710049, China;
3.University of Chinese Academy of Sciences, Beijing; 100049, China;
4.School of Microelectronics, Xian Jiaotong University, Xian; 710049, China;
5.State Key Laboratory of Institute of High Energy Physics Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing; 100049, China;
6.National Key Laboratory of Science and Technology on Space Microwave, China Academy of Space Technology, Xian; 710100, China
Recommended Citation
GB/T 7714
Guo, Junjiang,Wang, Dan,Xu, Yantao,et al. Secondary electron emission characteristics of Al2O3 coatings prepared by atomic layer deposition[J]. AIP Advances,2019,9(9).
APA Guo, Junjiang.,Wang, Dan.,Xu, Yantao.,Zhu, Xiangping.,Wen, Kaile.,...&Guo, Haitao.(2019).Secondary electron emission characteristics of Al2O3 coatings prepared by atomic layer deposition.AIP Advances,9(9).
MLA Guo, Junjiang,et al."Secondary electron emission characteristics of Al2O3 coatings prepared by atomic layer deposition".AIP Advances 9.9(2019).
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