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Secondary electron emission characteristics of Al2O3 coatings prepared by atomic layer deposition
Guo, Junjiang1,2,3; Wang, Dan4; Xu, Yantao1,3; Zhu, Xiangping1,3; Wen, Kaile3,5; Miao, Guanghui6; Cao, Weiwei1,3; Si, JinHai2; Lu, Min1; Guo, Haitao1
作者部门特种光纤材料及器件研究中心
2019-09-01
发表期刊AIP Advances
ISSN21583226
卷号9期号:9
产权排序1
摘要

Secondary electron emission (SEE) plays a crucial role in the gain performance of devices, such as electron multipliers and microchannel plates (MCPs). Gain performance could be improved by increasing the secondary electron yield (SEY) of device surface. Al2O3 coating is an ideal material for SEE, benefiting from its high SEY. The Al2O3 coating deposited on inner device walls by atomic layer deposition (ALD) can improve the gain performance of devices. In this study, the SEE characteristics of Al2O3 coatings were investigated experimentally. A series of Al2O3 coatings with thicknesses of 1-30 nm were prepared on Si substrate through the ALD method. Then, the SEY of the coatings were quantified as a function of primary electron energy in the range of 100∼1500 eV. Furthermore, an equation describing the true SEY as a function of thickness was established by applying theory of Dionne's SEE model. This work presents potential approach for controlling the SEE level of Al2O3 coatings through thickness adjustment and is crucial for comprehending the SEE of composite materials. © 2019 Author(s).

DOI10.1063/1.5113671
收录类别SCI ; EI
语种英语
WOS记录号WOS:000488516200018
出版者American Institute of Physics Inc.
EI入藏号20193807440396
引用统计
被引频次:18[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.opt.ac.cn/handle/181661/31864
专题光子功能材料与器件研究室
通讯作者Guo, Haitao
作者单位1.State Key Laboratory of Transient Optics and Photonics, Xian Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xian; 710119, China;
2.Key Laboratory for Physical Electronics, Devices of the Ministry of Education, Shaanxi Key Lab of Information Photonic Technique, School of Electronics and Information Engineering, Xian Jiaotong University, Xian; 710049, China;
3.University of Chinese Academy of Sciences, Beijing; 100049, China;
4.School of Microelectronics, Xian Jiaotong University, Xian; 710049, China;
5.State Key Laboratory of Institute of High Energy Physics Chinese Academy of Sciences, University of Chinese Academy of Sciences, Beijing; 100049, China;
6.National Key Laboratory of Science and Technology on Space Microwave, China Academy of Space Technology, Xian; 710100, China
推荐引用方式
GB/T 7714
Guo, Junjiang,Wang, Dan,Xu, Yantao,et al. Secondary electron emission characteristics of Al2O3 coatings prepared by atomic layer deposition[J]. AIP Advances,2019,9(9).
APA Guo, Junjiang.,Wang, Dan.,Xu, Yantao.,Zhu, Xiangping.,Wen, Kaile.,...&Guo, Haitao.(2019).Secondary electron emission characteristics of Al2O3 coatings prepared by atomic layer deposition.AIP Advances,9(9).
MLA Guo, Junjiang,et al."Secondary electron emission characteristics of Al2O3 coatings prepared by atomic layer deposition".AIP Advances 9.9(2019).
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