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Auxiliary structure of nano-pinnacle prepared on silicon substrate: Improving the emission intensity by 9 times in SSI-LEDs
Liu, Lingguang1; Wang, Yaogong1; Lin, Yuanyuan1; Zhang, Xiaoning1; Kuo, Yue2; Tian, Jinshou3,4
Department精密物理量测量实验室
2019-04
Source PublicationMaterials Science in Semiconductor Processing
ISSN13698001
Volume93Pages:226-230
Contribution Rank3
AbstractAuxiliary structure of nano-pinnacle is prepared on silicon substrate of SSI-LEDs device, and the micro-structure properties, electrical and optical characteristics of the proposed structure device are investigated. Non-uniform size and geometry of nano-pinnacles are prepared by wet-etching, and the most frequent geometry is ~230 × 140 nm pyramids. With help of the nano-pinnacle structure, the electric field strength distributed on treated surface of the nano-pinnacle sample is enhanced by ~4 times, resulting in the increase of the density of conductive paths by 3.6 times. By exploring the electrical and optical results, the onset voltage of light emission is decreased by 60% from ? 7.6 V to ? 3.4 V, and the emission intensity and efficiency are improved by ~9 times and ~8 times, respectively compared with the traditional structure device of SSI-LEDs. ? 2019 Elsevier Ltd
DOI10.1016/j.mssp.2019.01.010
Indexed ByEI
Language英语
PublisherElsevier Ltd
EI Accession Number20190306381862
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Document Type期刊论文
Identifierhttp://ir.opt.ac.cn/handle/181661/31100
Collection精密物理量测量实验室
Corresponding AuthorWang, Yaogong
Affiliation1.Key Laboratory of Physical Electronics and Devices of the Ministry of Education, Xi'an Jiaotong University, Xi'an; 710049, China;
2.Thin Film Nano & Microelectronics Research Lab, Texas A&M University, College Station; TX; 77843-3122, United States;
3.Xi'an Institute of Optics and Precision Mechanics of CAS, Key Lab Transient Opt & Photon, Xi'an; 710119, China;
4.Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan; Shanxi; 030006, China
Recommended Citation
GB/T 7714
Liu, Lingguang,Wang, Yaogong,Lin, Yuanyuan,et al. Auxiliary structure of nano-pinnacle prepared on silicon substrate: Improving the emission intensity by 9 times in SSI-LEDs[J]. Materials Science in Semiconductor Processing,2019,93:226-230.
APA Liu, Lingguang,Wang, Yaogong,Lin, Yuanyuan,Zhang, Xiaoning,Kuo, Yue,&Tian, Jinshou.(2019).Auxiliary structure of nano-pinnacle prepared on silicon substrate: Improving the emission intensity by 9 times in SSI-LEDs.Materials Science in Semiconductor Processing,93,226-230.
MLA Liu, Lingguang,et al."Auxiliary structure of nano-pinnacle prepared on silicon substrate: Improving the emission intensity by 9 times in SSI-LEDs".Materials Science in Semiconductor Processing 93(2019):226-230.
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