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Surface passivation of 1550nm AlxInyAsSb avalanche photodiode
Guo, Chunyan1,2,4; Lv, Yuexi3,4; Zheng, Da'nong3,4; Sun, Yaoyao3,4; Jiang, Zhi3,4; Jiang, Dongwei3,4; Wang, Guowei3,4; Xu, Yingqiang3,4; Wang, Tao1; Tian, Jinshou1; Wu, Zhaoxin2; Niu, Zhichuan3,4
Conference NameOptoelectronic Devices and Integration VII 2018
Source PublicationOptoelectronic Devices and Integration VII
Conference Date2018-10-11
Conference PlaceBeijing, China
Contribution Rank1

We report three kinds of surface passivation for AlxInyAsSb APD, which are SiO2, SiO2 after sulfuration and SU8 2005 treatments. A good sidewall profile of mesas were etch by Inductively Coupled Plasma (ICP) to 2.6μm depth. The order of dark current for device with SU8 passivation is less than-12 under the temperature of 100K. Dark current and photocurrent increase linearly with diameter of mesa. Also, the devices with different passivation methods produce photocurrent excited by incident power. The measurements are consistent with CV modeling and electric field simulations. ? 2018 SPIE.

KeywordAlxinyassb Avalanche Photodiode Surface Passivation Dark Current Photocurrent
Indexed ByEI ; CPCI
WOS IDWOS:000452640200027
EI Accession Number20184906168921
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Document Type会议论文
Corresponding AuthorNiu, Zhichuan
Affiliation1.Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Chinese Academy of Science, Xi'an Institute of Optics and Precision Mechanics, Xi'an; 710119, China;
2.Xi'an Jiaotong University, Xi'an; 710049, China;
3.State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Science, Beijing; 100083, China;
4.College of Material Science and Optoelectronic Technology, University of Chinese Academy of Science, Beijing; 100049, China
Recommended Citation
GB/T 7714
Guo, Chunyan,Lv, Yuexi,Zheng, Da'nong,et al. Surface passivation of 1550nm AlxInyAsSb avalanche photodiode[C]:SPIE,2018.
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