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Surface passivation of 1550nm AlxInyAsSb avalanche photodiode
Guo, Chunyan1,2,4; Lv, Yuexi3,4; Zheng, Da'nong3,4; Sun, Yaoyao3,4; Jiang, Zhi3,4; Jiang, Dongwei3,4; Wang, Guowei3,4; Xu, Yingqiang3,4; Wang, Tao1; Tian, Jinshou1; Wu, Zhaoxin2; Niu, Zhichuan3,4
2018
会议名称Optoelectronic Devices and Integration VII 2018
会议录名称Optoelectronic Devices and Integration VII
卷号10814
会议日期2018-10-11
会议地点Beijing, China
出版者SPIE
产权排序1
摘要

We report three kinds of surface passivation for AlxInyAsSb APD, which are SiO2, SiO2 after sulfuration and SU8 2005 treatments. A good sidewall profile of mesas were etch by Inductively Coupled Plasma (ICP) to 2.6μm depth. The order of dark current for device with SU8 passivation is less than-12 under the temperature of 100K. Dark current and photocurrent increase linearly with diameter of mesa. Also, the devices with different passivation methods produce photocurrent excited by incident power. The measurements are consistent with CV modeling and electric field simulations. ? 2018 SPIE.

关键词Alxinyassb Avalanche Photodiode Surface Passivation Dark Current Photocurrent
作者部门精密物理量测量实验室
DOI10.1117/12.2500523
收录类别EI ; CPCI
ISBN号9781510622265
语种英语
ISSN号0277786X;1996756X
WOS记录号WOS:000452640200027
EI入藏号20184906168921
引用统计
文献类型会议论文
条目标识符http://ir.opt.ac.cn/handle/181661/30864
专题精密物理量测量实验室
通讯作者Niu, Zhichuan
作者单位1.Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Chinese Academy of Science, Xi'an Institute of Optics and Precision Mechanics, Xi'an; 710119, China;
2.Xi'an Jiaotong University, Xi'an; 710049, China;
3.State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductor, Chinese Academy of Science, Beijing; 100083, China;
4.College of Material Science and Optoelectronic Technology, University of Chinese Academy of Science, Beijing; 100049, China
推荐引用方式
GB/T 7714
Guo, Chunyan,Lv, Yuexi,Zheng, Da'nong,et al. Surface passivation of 1550nm AlxInyAsSb avalanche photodiode[C]:SPIE,2018.
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