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Medium and High Voltage IGBT Module Using Nanosilver Paste Sintering Technology and Its Performance Characterization
其他题名采用纳米银焊膏烧结互连技术的中高压IGBT模块及其性能表征
Mei, Yunhui1,2; Feng, Jingjing1; Wang, Xiaomin1; Lu, Guoquan1; Zhang, Peng3; Lin, Zhongkang3
作者部门瞬态光学技术国家重点实验室
2017-10-31
发表期刊Gaodianya Jishu/High Voltage Engineering
ISSN10036520
卷号43期号:10页码:3307-3312
产权排序1
摘要

Interface contact through pressure is the way for press-pack insulated gate bipolar transistor (IGBT) modules in smart grid to conduct heat dissipation. However, the junction temperature of the press-pack IGBT modules could be too high, leading to degradation of electrical properties and even impairing the reliability, because of poor interfacial contact and poor heat dissipation. To overcome the above problems, we developed a sinter-pack IGBT module using nanosilver paste by forming electrical contact with chip to replace pressure contact in press-pack module. Then, the sinter-pack module was characterized by die-shear strength, thermal resistance, and static characteristics to compare with press-pack IGBT module. According to the experimental results, the thermal resistance of sinter-pack IGBT module decreased by 15.8%. The static electricity test results are consistent with two types of modules, further proving the feasibility of sinter-pack IGBT modules. The shear strength is around 20 MPa, indicating a good bonding quality of large area of die (13.5 mm×13.5 mm) with nanosiver paste. It is concluded that nano silver paste employed in press-pack IGBT modules can not only significantly decrease the thermal resistance of press-pack IGBT modules, but also get an excellent static electricity. Thus, a sinter-pack module is expected to be operated in smart grid because of the higher conversion efficiency, power density, and reliability during operating at high voltage and current applications. © 2017, High Voltage Engineering Editorial Department of CEPRI. All right reserved.

 

DOI10.13336/j.1003-6520.hve.20170925021
收录类别EI
语种中文
引用统计
文献类型期刊论文
条目标识符http://ir.opt.ac.cn/handle/181661/30836
专题瞬态光学技术国家重点实验室
通讯作者Mei, Yunhui
作者单位1.School of Materials Science and Engineering, Tianjin University, Tianjin; 300350, China;
2.State Key Laboratory of Transient Optics and Photonics, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an; 710119, China;
3.Global Energy Internet Research Institute, Beijing; 102200, China
推荐引用方式
GB/T 7714
Mei, Yunhui,Feng, Jingjing,Wang, Xiaomin,et al. Medium and High Voltage IGBT Module Using Nanosilver Paste Sintering Technology and Its Performance Characterization[J]. Gaodianya Jishu/High Voltage Engineering,2017,43(10):3307-3312.
APA Mei, Yunhui,Feng, Jingjing,Wang, Xiaomin,Lu, Guoquan,Zhang, Peng,&Lin, Zhongkang.(2017).Medium and High Voltage IGBT Module Using Nanosilver Paste Sintering Technology and Its Performance Characterization.Gaodianya Jishu/High Voltage Engineering,43(10),3307-3312.
MLA Mei, Yunhui,et al."Medium and High Voltage IGBT Module Using Nanosilver Paste Sintering Technology and Its Performance Characterization".Gaodianya Jishu/High Voltage Engineering 43.10(2017):3307-3312.
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