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STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS
ZHAO, JL1; GAO, Y1; LIU, XY1; DOU, K1; HUANG, SH1; YU, JQ1; LIANG, JC2; GAO, HK3
Department中国科学院西安光学精密机械研究所(2010年前)
1995-07-15
Source PublicationJOURNAL OF MATERIALS SCIENCE LETTERS
ISSN0261-8028
Volume14Issue:14Pages:1004-1006
Contribution Rank3
SubtypeArticle
WOS HeadingsScience & Technology ; Technology
Indexed BySCI
WOS KeywordSEMI-INSULATING GAAS ; MOLECULAR-BEAM EPITAXY ; LOW-TEMPERATURES ; LUMINESCENCE ; EXCITATION
Language英语
WOS Research AreaMaterials Science
WOS SubjectMaterials Science, Multidisciplinary
WOS IDWOS:A1995RL97100010
Citation statistics
Document Type期刊论文
Identifierhttp://ir.opt.ac.cn/handle/181661/30327
Collection中国科学院西安光学精密机械研究所(2010年前)
Affiliation1.CHINESE ACAD SCI,CHANGCHUN INST PHYS,EXCITED STATE PROC LAB,CHANGCHUN 130021,PEOPLES R CHINA
2.CIVIL AVIAT INST CHINA,DEPT BASIC SCI,TIANJIN 300300,PEOPLES R CHINA
3.CHINESE ACAD SCI,XIAN INST OPT & FINE MECH,XIAN 710068,PEOPLES R CHINA
Recommended Citation
GB/T 7714
ZHAO, JL,GAO, Y,LIU, XY,et al. STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS[J]. JOURNAL OF MATERIALS SCIENCE LETTERS,1995,14(14):1004-1006.
APA ZHAO, JL.,GAO, Y.,LIU, XY.,DOU, K.,HUANG, SH.,...&GAO, HK.(1995).STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS.JOURNAL OF MATERIALS SCIENCE LETTERS,14(14),1004-1006.
MLA ZHAO, JL,et al."STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .3. 0.78 AND 0.84 EV PHOTOLUMINESCENCE EMISSIONS".JOURNAL OF MATERIALS SCIENCE LETTERS 14.14(1995):1004-1006.
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