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STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .2. 1.13 EV PHOTOLUMINESCENCE EMISSION
ZHAO, JL1; GAO, Y1; LIU, XY1; SU, XA1; HUANG, SH1; YU, JQ1; LIANG, JC2; GAO, HK3
Department中国科学院西安光学精密机械研究所(2010年前)
1994-12-01
Source PublicationJOURNAL OF MATERIALS SCIENCE LETTERS
ISSN0261-8028
Volume13Issue:23Pages:1694-1696
Contribution Rank3
SubtypeArticle
WOS HeadingsScience & Technology ; Technology
Indexed BySCI
WOS KeywordEPITAXIAL GAAS ; DEFECTS
Language英语
WOS Research AreaMaterials Science
WOS SubjectMaterials Science, Multidisciplinary
WOS IDWOS:A1994PX08400014
Citation statistics
Cited Times:4[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.opt.ac.cn/handle/181661/30326
Collection中国科学院西安光学精密机械研究所(2010年前)
Affiliation1.CIVIL AVIAT INST CHINA,DEPT BASIC SCI,TIANJIN 300300,PEOPLES R CHINA
2.CHINESE ACAD SCI,CHANGCHUN INST PHYS,CHANGCHUN 130021,PEOPLES R CHINA
3.CHINESE ACAD SCI,XIAN INST OPT & PRECIS MECH,XIAN 710068,PEOPLES R CHINA
Recommended Citation
GB/T 7714
ZHAO, JL,GAO, Y,LIU, XY,et al. STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .2. 1.13 EV PHOTOLUMINESCENCE EMISSION[J]. JOURNAL OF MATERIALS SCIENCE LETTERS,1994,13(23):1694-1696.
APA ZHAO, JL.,GAO, Y.,LIU, XY.,SU, XA.,HUANG, SH.,...&GAO, HK.(1994).STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .2. 1.13 EV PHOTOLUMINESCENCE EMISSION.JOURNAL OF MATERIALS SCIENCE LETTERS,13(23),1694-1696.
MLA ZHAO, JL,et al."STUDIES ON DEEP LEVELS IN GAAS EPILAYERS GROWN ON SI BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION .2. 1.13 EV PHOTOLUMINESCENCE EMISSION".JOURNAL OF MATERIALS SCIENCE LETTERS 13.23(1994):1694-1696.
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