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SiC power MOSFET with monolithically integrated Schottky barrier diode for improved switching performances
Dai, Xiaoping1; Jiang, Huaping2; Zheng, Changwei2; Ke, Maolong3
2017
Conference Name2017 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2017
Source PublicationPCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
Conference Date2017-05-16
Conference PlaceNuremberg, Germany
PublisherInstitute of Electrical and Electronics Engineers Inc.
Contribution Rank3
Abstract

A power Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) featuring a monolithically integrated Schottky Barrier Diode (SBD) is proposed in this paper. The proposed structure is optimized to suppress the electric field in the gate oxide under reverse blocking state, which is beneficial to enhancing the gate oxide long term reliability. Both the static and switching characteristics are studied by TCAD simulation using Sentaurus. Compared to the conventional MOSFET-SBD pair, the proposed device shows not only lower switching loss but also smaller current overshoot during the turn on process. © VDE VERLAG GMBH · Berlin · Offenbach.

Department瞬态光学技术国家重点实验室
DOI10.1109/SBMicro.2017.7990787
Indexed ByEI
ISBN9783800744244
Language英语
Citation statistics
Document Type会议论文
Identifierhttp://ir.opt.ac.cn/handle/181661/29903
Collection瞬态光学技术国家重点实验室
Affiliation1.State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou CRRC Time S Electric Co. Ltd., China
2.Dynex Semiconductor Ltd., United Kingdom
3.Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, China
Recommended Citation
GB/T 7714
Dai, Xiaoping,Jiang, Huaping,Zheng, Changwei,et al. SiC power MOSFET with monolithically integrated Schottky barrier diode for improved switching performances[C]:Institute of Electrical and Electronics Engineers Inc.,2017.
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