SiC power MOSFET with monolithically integrated Schottky barrier diode for improved switching performances | |
Dai, Xiaoping1; Jiang, Huaping2; Zheng, Changwei2; Ke, Maolong3 | |
2017 | |
会议名称 | 2017 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2017 |
会议录名称 | PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management |
会议日期 | 2017-05-16 |
会议地点 | Nuremberg, Germany |
出版者 | Institute of Electrical and Electronics Engineers Inc. |
产权排序 | 3 |
摘要 | A power Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) featuring a monolithically integrated Schottky Barrier Diode (SBD) is proposed in this paper. The proposed structure is optimized to suppress the electric field in the gate oxide under reverse blocking state, which is beneficial to enhancing the gate oxide long term reliability. Both the static and switching characteristics are studied by TCAD simulation using Sentaurus. Compared to the conventional MOSFET-SBD pair, the proposed device shows not only lower switching loss but also smaller current overshoot during the turn on process. © VDE VERLAG GMBH · Berlin · Offenbach. |
作者部门 | 瞬态光学技术国家重点实验室 |
DOI | 10.1109/SBMicro.2017.7990787 |
收录类别 | EI |
ISBN号 | 9783800744244 |
语种 | 英语 |
引用统计 | |
文献类型 | 会议论文 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/29903 |
专题 | 瞬态光学研究室 |
作者单位 | 1.State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou CRRC Time S Electric Co. Ltd., China 2.Dynex Semiconductor Ltd., United Kingdom 3.Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, China |
推荐引用方式 GB/T 7714 | Dai, Xiaoping,Jiang, Huaping,Zheng, Changwei,et al. SiC power MOSFET with monolithically integrated Schottky barrier diode for improved switching performances[C]:Institute of Electrical and Electronics Engineers Inc.,2017. |
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SiC power MOSFET wit(310KB) | 会议论文 | 限制开放 | CC BY-NC-SA | 请求全文 |
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