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SiC power MOSFET with monolithically integrated Schottky barrier diode for improved switching performances
Dai, Xiaoping1; Jiang, Huaping2; Zheng, Changwei2; Ke, Maolong3
2017
会议名称2017 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2017
会议录名称PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
会议日期2017-05-16
会议地点Nuremberg, Germany
出版者Institute of Electrical and Electronics Engineers Inc.
产权排序3
摘要

A power Silicon Carbide (SiC) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) featuring a monolithically integrated Schottky Barrier Diode (SBD) is proposed in this paper. The proposed structure is optimized to suppress the electric field in the gate oxide under reverse blocking state, which is beneficial to enhancing the gate oxide long term reliability. Both the static and switching characteristics are studied by TCAD simulation using Sentaurus. Compared to the conventional MOSFET-SBD pair, the proposed device shows not only lower switching loss but also smaller current overshoot during the turn on process. © VDE VERLAG GMBH · Berlin · Offenbach.

作者部门瞬态光学技术国家重点实验室
DOI10.1109/SBMicro.2017.7990787
收录类别EI
ISBN号9783800744244
语种英语
引用统计
文献类型会议论文
条目标识符http://ir.opt.ac.cn/handle/181661/29903
专题瞬态光学技术国家重点实验室
作者单位1.State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou CRRC Time S Electric Co. Ltd., China
2.Dynex Semiconductor Ltd., United Kingdom
3.Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, China
推荐引用方式
GB/T 7714
Dai, Xiaoping,Jiang, Huaping,Zheng, Changwei,et al. SiC power MOSFET with monolithically integrated Schottky barrier diode for improved switching performances[C]:Institute of Electrical and Electronics Engineers Inc.,2017.
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