Xi'an Institute of Optics and Precision Mechanics,CAS
A new kind of vertically aligned field emission transistor with a cylindrical vacuum channel | |
Shen, Zhihua1; Wang, Xiao1; Wu, Shengli1; Tian, Jinshou2; Wu, Shengli (slwu@mail.xjtu.edu.cn) | |
作者部门 | 精密物理量测量实验室 |
2017-03-01 | |
发表期刊 | VACUUM |
ISSN | 0042-207X |
卷号 | 137页码:163-168 |
产权排序 | 2 |
摘要 | This study investigated a vertically aligned field emission transistor with a cylindrical vacuum channel. The channel length of this proposed transistor can be precisely controlled and easily fabricated to be comparable to the mean free path of electrons in air so that the device can operate in the air without performance degradation. In the study, this vacuum transistor showed a low threshold voltage (1.2 V, 2.2 V, and 3.3 V) with a gate dielectric thickness of 10 nm, 15 nm, and 20 nm and a subthreshold slope of 1.1 V/dec. It was found that the vacuum channel radius should be no less than 20 nm, otherwise, severe performance degradation will appear due to the effect of the gate shield (leading to reduction of the anode current) and electron collision events with the dielectric layer (presenting reliability issues). This kind of vacuum transistor may have wide applications in extreme conditions such as high temperature and intense irradiation. (C) 2017 Elsevier Ltd. All rights reserved. |
文章类型 | Article |
关键词 | Finite Integration Technique (Fit) Vacuum Channel Field Emission Transistor |
学科领域 | Electricity: Basic Concepts And Phenomena |
WOS标题词 | Science & Technology ; Technology ; Physical Sciences |
DOI | 10.1016/j.vacuum.2017.01.002 |
收录类别 | SCI ; EI |
关键词[WOS] | WORK FUNCTION ; BREAKDOWN |
语种 | 英语 |
WOS研究方向 | Materials Science ; Physics |
项目资助者 | National Natural Science Foundation of China(51271140 ; 61275023) |
WOS类目 | Materials Science, Multidisciplinary ; Physics, Applied |
WOS记录号 | WOS:000394070200024 |
引用统计 | |
文献类型 | 期刊论文 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/28600 |
专题 | 条纹相机工程中心 |
通讯作者 | Wu, Shengli (slwu@mail.xjtu.edu.cn) |
作者单位 | 1.Xi An Jiao Tong Univ, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R China 2.Xian Inst Opt & Precis Mech CAS, State Key Lab Transient Opt & Photon, Xian 710119, Peoples R China |
推荐引用方式 GB/T 7714 | Shen, Zhihua,Wang, Xiao,Wu, Shengli,et al. A new kind of vertically aligned field emission transistor with a cylindrical vacuum channel[J]. VACUUM,2017,137:163-168. |
APA | Shen, Zhihua,Wang, Xiao,Wu, Shengli,Tian, Jinshou,&Wu, Shengli .(2017).A new kind of vertically aligned field emission transistor with a cylindrical vacuum channel.VACUUM,137,163-168. |
MLA | Shen, Zhihua,et al."A new kind of vertically aligned field emission transistor with a cylindrical vacuum channel".VACUUM 137(2017):163-168. |
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文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
A new kind of vertic(1331KB) | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | 浏览 请求全文 |
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