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A new kind of vertically aligned field emission transistor with a cylindrical vacuum channel
Shen, Zhihua1; Wang, Xiao1; Wu, Shengli1; Tian, Jinshou2; Wu, Shengli (slwu@mail.xjtu.edu.cn)
作者部门精密物理量测量实验室
2017-03-01
发表期刊VACUUM
ISSN0042-207X
卷号137页码:163-168
产权排序2
摘要

This study investigated a vertically aligned field emission transistor with a cylindrical vacuum channel. The channel length of this proposed transistor can be precisely controlled and easily fabricated to be comparable to the mean free path of electrons in air so that the device can operate in the air without performance degradation. In the study, this vacuum transistor showed a low threshold voltage (1.2 V, 2.2 V, and 3.3 V) with a gate dielectric thickness of 10 nm, 15 nm, and 20 nm and a subthreshold slope of 1.1 V/dec. It was found that the vacuum channel radius should be no less than 20 nm, otherwise, severe performance degradation will appear due to the effect of the gate shield (leading to reduction of the anode current) and electron collision events with the dielectric layer (presenting reliability issues). This kind of vacuum transistor may have wide applications in extreme conditions such as high temperature and intense irradiation. (C) 2017 Elsevier Ltd. All rights reserved.

文章类型Article
关键词Finite Integration Technique (Fit) Vacuum Channel Field Emission Transistor
学科领域Electricity: Basic Concepts And Phenomena
WOS标题词Science & Technology ; Technology ; Physical Sciences
DOI10.1016/j.vacuum.2017.01.002
收录类别SCI ; EI
关键词[WOS]WORK FUNCTION ; BREAKDOWN
语种英语
WOS研究方向Materials Science ; Physics
项目资助者National Natural Science Foundation of China(51271140 ; 61275023)
WOS类目Materials Science, Multidisciplinary ; Physics, Applied
WOS记录号WOS:000394070200024
引用统计
被引频次:17[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.opt.ac.cn/handle/181661/28600
专题条纹相机工程中心
通讯作者Wu, Shengli (slwu@mail.xjtu.edu.cn)
作者单位1.Xi An Jiao Tong Univ, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R China
2.Xian Inst Opt & Precis Mech CAS, State Key Lab Transient Opt & Photon, Xian 710119, Peoples R China
推荐引用方式
GB/T 7714
Shen, Zhihua,Wang, Xiao,Wu, Shengli,et al. A new kind of vertically aligned field emission transistor with a cylindrical vacuum channel[J]. VACUUM,2017,137:163-168.
APA Shen, Zhihua,Wang, Xiao,Wu, Shengli,Tian, Jinshou,&Wu, Shengli .(2017).A new kind of vertically aligned field emission transistor with a cylindrical vacuum channel.VACUUM,137,163-168.
MLA Shen, Zhihua,et al."A new kind of vertically aligned field emission transistor with a cylindrical vacuum channel".VACUUM 137(2017):163-168.
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