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InGaAs-MSM photodetector with low dark current
Alternative Title低暗电流InGaAs-MSM光电探测器
Yan, Xin; Wang, Tao; Yin, Fei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Xin, Li-Wei; Tian, Jin-Shou
2015-06-01
Source PublicationGuangzi Xuebao/Acta Photonica Sinica
Volume44Issue:6
AbstractMSM (Mental-Semiconductor-Mental) photodetector has been widely used for its low capacitance and high bandwidth. For example, it can be used for space communication, remote sense and so on. But the development of MSM devices is still hindered by the dark current. In this paper, the 100×100 μm2 InGaAs-MSM photodetector is successfully fabricated. The dark current density is reduced to 0.6 pA/μm2 (5 V) by designing InAlGaAs/InGaAs short period superlattices and InAlAs Schottky barrier enhancement and this improves the SNR. Parameters of the device are characterized as follows: the 3dB bandwidth is 6.8 GHz, the rise time is 58.8 ps, the responsibility is 0.55 A/W at 1550 nm and the external quantum efficiency of the absorption region is 88%. Inhibition mechanisms of the short period superlattices and Schottky barrier enhancement are analyzed. ©, 2015, Chinese Optical Society. All right reserved.
Indexed ByEI
Language中文
Document Type期刊论文
Identifierhttp://ir.opt.ac.cn/handle/181661/27267
Collection条纹相机工程中心
Recommended Citation
GB/T 7714
Yan, Xin,Wang, Tao,Yin, Fei,et al. InGaAs-MSM photodetector with low dark current[J]. Guangzi Xuebao/Acta Photonica Sinica,2015,44(6).
APA Yan, Xin.,Wang, Tao.,Yin, Fei.,Ni, Hai-Qiao.,Niu, Zhi-Chuan.,...&Tian, Jin-Shou.(2015).InGaAs-MSM photodetector with low dark current.Guangzi Xuebao/Acta Photonica Sinica,44(6).
MLA Yan, Xin,et al."InGaAs-MSM photodetector with low dark current".Guangzi Xuebao/Acta Photonica Sinica 44.6(2015).
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