Xi'an Institute of Optics and Precision Mechanics,CAS
InGaAs-MSM photodetector with low dark current | |
其他题名 | 低暗电流InGaAs-MSM光电探测器 |
Yan, Xin; Wang, Tao; Yin, Fei; Ni, Hai-Qiao; Niu, Zhi-Chuan; Xin, Li-Wei; Tian, Jin-Shou | |
2015-06-01 | |
发表期刊 | Guangzi Xuebao/Acta Photonica Sinica |
卷号 | 44期号:6 |
摘要 | MSM (Mental-Semiconductor-Mental) photodetector has been widely used for its low capacitance and high bandwidth. For example, it can be used for space communication, remote sense and so on. But the development of MSM devices is still hindered by the dark current. In this paper, the 100×100 μm2 InGaAs-MSM photodetector is successfully fabricated. The dark current density is reduced to 0.6 pA/μm2 (5 V) by designing InAlGaAs/InGaAs short period superlattices and InAlAs Schottky barrier enhancement and this improves the SNR. Parameters of the device are characterized as follows: the 3dB bandwidth is 6.8 GHz, the rise time is 58.8 ps, the responsibility is 0.55 A/W at 1550 nm and the external quantum efficiency of the absorption region is 88%. Inhibition mechanisms of the short period superlattices and Schottky barrier enhancement are analyzed. ©, 2015, Chinese Optical Society. All right reserved. |
收录类别 | EI |
语种 | 中文 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/27267 |
专题 | 条纹相机工程中心 |
推荐引用方式 GB/T 7714 | Yan, Xin,Wang, Tao,Yin, Fei,et al. InGaAs-MSM photodetector with low dark current[J]. Guangzi Xuebao/Acta Photonica Sinica,2015,44(6). |
APA | Yan, Xin.,Wang, Tao.,Yin, Fei.,Ni, Hai-Qiao.,Niu, Zhi-Chuan.,...&Tian, Jin-Shou.(2015).InGaAs-MSM photodetector with low dark current.Guangzi Xuebao/Acta Photonica Sinica,44(6). |
MLA | Yan, Xin,et al."InGaAs-MSM photodetector with low dark current".Guangzi Xuebao/Acta Photonica Sinica 44.6(2015). |
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InGaAs-MSM photodete(1263KB) | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | 浏览 请求全文 |
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