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Thermal reaction of high power semiconductor laser with voids in solder layer
DingXiaochen; ZhangPu; XiongLingling; OuXiang; LiXiaoning; XuZhongfeng; WangJingwei; LiuXingsheng; Xu Zhongfeng
作者部门瞬态光学国家重点实验室
2011
发表期刊Chinese Journal of Lasers
ISSN0258-7025
卷号38期号:9页码:0902006
产权排序2
摘要With the improvement of power, efficiency, reliability, manufacturability, and cost of high power semiconductor laser, many new applications are being enabled. Most of the semiconductor laser bars are packaged with the indium solder. However, some small voids are created during the packaging process, which will be gradually enlarged by the electromigration and electrothermal migration of the indium solder. Voids may cause local overheating near the facets of the laser. Therefore it is necessary to study the thermal behavior of semiconductor laser bars with voids in the solder layer. The thermal behavior of a single-bar CS-packaged 40 W 808 nm semiconductor laser with voids in the solder layer is studied and the relationship between temperature and voids size is analysed. The distribution of voids is predicted according to the space spectrum of a 40 W 808 nm semiconductor laser bar and the simulation results. It is found that the simulation results agree well with the measurement of the scanning acoustic microscope (SAM) image of solder layer.
关键词激光器 半导体激光器 激光器巴条/阵列 热行为 空间光谱 铟焊料
URL查看原文
收录类别EI
语种英语
项目资助者国家863计划; 中国科学院“百人计划”
文献类型期刊论文
条目标识符http://ir.opt.ac.cn/handle/181661/19802
专题瞬态光学研究室
通讯作者Xu Zhongfeng
推荐引用方式
GB/T 7714
DingXiaochen,ZhangPu,XiongLingling,et al. Thermal reaction of high power semiconductor laser with voids in solder layer[J]. Chinese Journal of Lasers,2011,38(9):0902006.
APA DingXiaochen.,ZhangPu.,XiongLingling.,OuXiang.,LiXiaoning.,...&Xu Zhongfeng.(2011).Thermal reaction of high power semiconductor laser with voids in solder layer.Chinese Journal of Lasers,38(9),0902006.
MLA DingXiaochen,et al."Thermal reaction of high power semiconductor laser with voids in solder layer".Chinese Journal of Lasers 38.9(2011):0902006.
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